Dave's PCF WIP: Paragraphs

Paragraphs

Actions	Application	Content	Paragraph Number	Notes	Modified
		Content		Paragraph Number	Notes	Any Field
View Edit Delete	US10998041B1	In the example illustrated, adjustments to create adjusted read level B 702, adjusted read level E 704, and adjusted read level G 706 have been made. The previous read levels are also indicated as previous read level B 708, previous read level E 710, and previous read level G 712. The read scan operation, in one embodiment, determines different adjustments to the previous read levels, resulting in the adjusted read levels. In the depicted embodiment, the read scan operation may determine adjustment 714, adjustment 716, and adjustment 718 individually for the different memory states B, E, and G, with different magnitudes, different directions, and the like, customizing the different adjustment levels, adjusted read level B 702, adjusted read level E 704, and adjusted read level G 706 individually to media characteristics of the different memory states B, E, and G. Each memory state Er, A, B, C, etc., through O as illustrated in FIG. 4 may receive this treatment. A subset of the memory states, Er through G, are illustrated here for convenience.	175	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	The adjusted read levels align with the changed cell threshold voltage distributions. Were previous read levels, such as previous read level B 708, previous read level E 710, previous read level G 712 used, the memory cells near the boundaries would register data errors. Similarly, because the charge levels of the different memory states A, D, and G have drifted, leaked, been disturbed, or the like by different amounts, and/or in different directions, using the same adjustment for each memory state B, E, and G, in certain embodiments, may register data errors. By configuring the corresponding set of storage cells to use the individually adjusted read levels, the read scan operation may prevent, avoid, or correct potential data errors. In one embodiment, the read scan operation determines the adjusted read levels, adjusted read level B 702, adjusted read level E 704, and adjusted read level G 706, reactively, after a bit error rate crosses a threshold. In another embodiment, the read scan operation determines the adjusted read levels proactively based on operating conditions and media characteristics for a corresponding set of memory cells.	176	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	As is illustrated here, an increasing threshold voltage shift 720 of memory state A may necessitate adjustment 714 resulting in an adjusted read level B 702 (wherein read level B demarcates the transition between memory state A and memory state B). Similarly, an increasing threshold voltage shift 720 of memory state D may necessitate adjustment 716 to adjusted read level E 704. A decreasing threshold voltage shift 722 to memory state G, on the other hand, may necessitate adjustment 718 to adjusted read level G 706, based on the illustrated example in FIG. 7.	177	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	One may observe that the increasing threshold voltage shift 720 of memory state A 728 is frequently accompanied by an increasing threshold voltage shift 720 of memory state D 730. These shifts are one example of a correlation. "Correlation" refers to a relation existing between phenomena, attributes, behaviors, or things or between mathematical or statistical variables which tend to vary, be associated, or occur together in a way not expected on the basis of chance alone. ("Correlation." Merriam-Webster.com Dictionary, Merriam-Webster, Accessed 10 Apr. 2020. Edited.)	178	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	A relation/correlation may be represented in a variety of ways, including by use of numbers, formulas, graphs, diagrams or the like. In certain embodiments, the correlation may represent a one-way relationship between a first thing and a second thing, meaning the correlation exists from the first thing to the second thing but not from the second thing to the first thing. In other embodiments, the correlation may represent a two-way relationship between a first thing and a second thing, meaning that the same correlation exists in comparing the first thing to the second thing and from the second thing to the first thing.	179	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	In certain embodiments, the correlation represents a magnitude and/or rate of change in an attribute or behavior between two or more things. Correlations may be observed, or derived, by testing and analysis of results from normal use, experiments, machine learning, or the like. Correlations between two things, such as memory cells, threshold voltages, memory die, memory states, cell threshold voltage distributions, or the like, may be characterized as positive correlations or negative correlations.	180	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	Specifically, because the increasing threshold voltage shift 720 of memory state A occurs in the same direction as the increasing threshold voltage shift 720 of memory state D, the correlation between them is referred to as a positive shift correlation 724. "Positive correlation" refers to a correlation in which two or more correlated things respond in the same manner to a particular influence, environment, action, or stimuli. For example, where threshold voltages of memory cells are represented by cell threshold voltage distributions and the cell threshold voltage distributions are mapped to memory states, memory cells within a first memory state are positively correlated to memory cells within a second memory state when the correlated attribute changes in the same direction for the memory cells of the first memory state and the memory cells of the second memory state.	181	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	Said another way, if the correlated attribute increases for the memory cells of the first memory state and the correlated attribute increases for the memory cells of the second memory state, this is a positive correlation. In certain embodiments, the correlated attribute may comprise a threshold voltage, or change in a cell threshold voltage distribution for a set of memory cells in a memory state.	182	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	One may observe that an increasing threshold voltage shift 720 of memory state D 730 is often accompanied by a decreasing threshold voltage shift 722 of memory state G 732. This relationship is another example of a correlation. Because the increasing threshold voltage shift 720 in memory state D 730 and the decreasing threshold voltage shift 722 in memory state G 732 occur in opposite directions, this correlation is referred to as a negative shift correlation 726. "Negative correlation" refers to a correlation in which two or more correlated things respond in an opposite manner to a particular influence, environment, action, or stimuli. For example, where threshold voltages of memory cells are represented by cell threshold voltage distributions and the cell threshold voltage distributions are mapped to memory states, memory cells within a first memory state are negatively correlated to memory cells within a second memory state when the correlated attribute changes in the opposite direction for the memory cells of the first memory state and the memory cells of the second memory state.	183	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	Said another way, if the correlated attribute increases for the memory cells of the first memory state and the correlated attribute decreases for the memory cells of the second memory state, this is a negative correlation. In certain embodiments, the correlated attribute may comprise a threshold voltage, or change in a cell threshold voltage distribution for a set of memory cells in memory states.	184	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	Positive shift correlation 724 and Negative shift correlation 726 are both examples of shift correlations. "Shift correlation" refers to a correlation in which memory cells of a cell threshold voltage distribution within a first memory state change or shift in threshold voltage (either increasing or decreasing) in response to passage of time, or use of a storage device, in a manner that correlates to a change or shift in threshold voltage (either increasing or decreasing) for memory cells of a cell threshold voltage distribution within a second memory state. A shift correlation may exist between any two memory states used for a set of memory cells.	185	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	In certain embodiments, the correlation may be represented by a magnitude and/or rate of change in an attribute or behavior between two or more things. The size of a value representing a correlation may directly relate to the strength or weakness of the correlation. Similarly, positive correlations may be represented by positive values for a correlation and negative correlations may be represented by negative values for a correlation. In one embodiment, a correlation is represented by a correlation factor. "Correlation factor" refers to a value that modifies a correlated attribute when the correlated attribute is multiplied by the correlation factor such that the correlated attribute accounts for a correlation associated with the correlation factor. For example, in one embodiment, the correlated attribute may be a read level. Each read level may mark a boundary between two adjacent memory states.	186	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	A correlation factor may represent how one memory state relates to another memory state such that multiplying the correlation factor by a current read level results in a correlated read level modified to account for the correlation. A correlation factor may be a real number and may be a positive number reflecting a positive correlation, a negative number reflecting a negative correlation, a zero representing no correlation, or a 1 representing a complete correlation. Correlation factors may be helpful in modifying a value to reflect a correlation. For example, in one embodiment, the value may be multiplied by a correlation factor such that the value then accounts for the correlation.	187	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	Correlations may be determined and quantified as correlation factors through a number of methods. Research and development testing of a memory design may be performed. Analytics may be gathered from devices operating in the field. Large scale experimentation may be implemented. Machine learning may be employed. Correlations determined through these methodologies may then be used to implement the solution disclosed herein.	188	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	FIG. 8 depicts an example of correlations between memory states 800 and adjustments to read levels for a set of multi-level storage cells of non-volatile memory media. In FIG. 7 a change in threshold voltage for memory cells may result in a shift in the threshold voltages and the corresponding cell threshold voltage distribution(s), e.g., the curves.	189	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	FIG. 8 illustrates another change phenomena for memory cells and the corresponding a cell threshold voltage distribution(s), e.g., the curves. FIG. 8 illustrates that certain memory states may have a correlation to another memory state based on a widening or narrowing of the cell threshold voltage distribution(s), referred to herein as width correlations. Those of still in the art may appreciate that certain non-volatile storage media technologies may, or may not, experience one, or the other, or both of the types of width correlations (widening and narrowing). However, the concepts disclosed and claimed herein apply to non-volatile storage media technologies that experience or one, or the other, or both of the width correlations. "Width correlation" refers to a correlation in which memory cells of a cell threshold voltage distribution within a first memory state change threshold voltage in a manner that widens or narrows a curve representing the cell threshold voltage distribution within the first memory state in response to passage of time, or use of a storage device, in a manner that correlates to a change of threshold voltage in a manner that widens or narrows a curve representing the cell threshold voltage distribution within the second memory state.	190	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	In the example illustrated, adjustments to create adjusted read level B 802, adjusted read level E 804, and adjusted read level G 806 have been made. The previous read levels are also indicated as previous read level B 808, previous read level E 810, and previous read level G 812. The read scan operation, in one embodiment, determines different adjustments to the previous read levels, resulting in the adjusted read levels. The read scan operation may determine adjustment 814, adjustment 816, and adjustment 818 individually for the different memory states B, E, and G, with different magnitudes, different directions, and the like, customizing the different adjustment levels, adjusted read level B 802, adjusted read level E 804, adjusted read level G 806 individually to media characteristics of the different memory states B, E, and G. Each memory state Er, A, B, C, etc., through O as illustrated in FIG. 4 may receive this treatment. A subset of the memory states, Er through G, are illustrated here for convenience. The adjusted read levels align with the changed cell threshold voltage distributions.	191	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	Whereas FIG. 7 illustrated shifting of memory states and shift correlations between memory states, FIG. 8 illustrates an example of correlations between memory states based on a change in width of two cell threshold voltage distributions. Some memory states may exhibit an increasing width 820 while others exhibit a decreasing width (narrowing) 822. In the illustrated example, an increasing width 820 of memory state A 824 may necessitate the adjustment 814 resulting in the adjusted read level B 802. An increasing width 820 in memory state D 826 may similarly result in adjusted read level E 804, whereas a decreasing width (narrowing) 822 of memory state G 830 may yield adjusted read level G 806.	192	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	One may observe that the increasing width 820 of memory state A 824 is frequently accompanied by an increasing width 820 of memory state D 826. These width relationships are one example of a correlation. Specifically, because the increasing width 820 of memory state A 824 occurs in the same direction as the increasing width 820 of memory state D 826, the correlation between them is referred to as a positive width correlation 828.	193	Added by DJM 12 2021	12/22/21, 12:00 AM
View Edit Delete	US10998041B1	One may observe that an increasing width 820 of memory state D 826 is often accompanied by a decreasing width (narrowing) 822 of memory state G 830. This relationship is another example of a correlation. Because the increasing width 820 of memory state D 826 and the decreasing width (narrowing) 822 in memory state G 830 occur in opposite directions, this correlation is referred to as a negative width correlation 832.	194	Added by DJM 12 2021	12/22/21, 12:00 AM

Page 7 of 14, showing 20 record(s) out of 268 total