16869424
Paragraph Number189
6429
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
FIG. 8 depicts an example of correlations between memory states 800 and adjustments to read levels for a set of multi-level storage cells of non-volatile memory media. In FIG. 7 a change in threshold voltage for memory cells may result in a shift in the threshold voltages and the corresponding cell threshold voltage distribution(s), e.g., the curves.
Notes
Added by DJM 12 2021