Paragraph 189
Paragraph 189
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
189
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,429
Content
FIG. 8 depicts an example of correlations between memory states 800 and adjustments to read levels for a set of multi-level storage cells of non-volatile memory media. In FIG. 7 a change in threshold voltage for memory cells may result in a shift in the threshold voltages and the corresponding cell threshold voltage distribution(s), e.g., the curves.
Notes
Added by DJM 12 2021