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Dave's PCF WIP: Paragraphs

6422

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

182

Content

Said another way, if the correlated attribute increases for the memory cells of the first memory state and the correlated attribute increases for the memory cells of the second memory state, this is a positive correlation. In certain embodiments, the correlated attribute may comprise a threshold voltage, or change in a cell threshold voltage distribution for a set of memory cells in a memory state.

Notes

Added by DJM 12 2021