Paragraph 182
Paragraph 182
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
182
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,422
Content
Said another way, if the correlated attribute increases for the memory cells of the first memory state and the correlated attribute increases for the memory cells of the second memory state, this is a positive correlation. In certain embodiments, the correlated attribute may comprise a threshold voltage, or change in a cell threshold voltage distribution for a set of memory cells in a memory state.
Notes
Added by DJM 12 2021