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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
176
Application Number
16869424
Reference Case 1
Reference Case 2
Content
The adjusted read levels align with the changed cell threshold voltage distributions. Were previous read levels, such as previous read level B 708, previous read level E 710, previous read level G 712 used, the memory cells near the boundaries would register data errors. Similarly, because the charge levels of the different memory states A, D, and G have drifted, leaked, been disturbed, or the like by different amounts, and/or in different directions, using the same adjustment for each memory state B, E, and G, in certain embodiments, may register data errors. By configuring the corresponding set of storage cells to use the individually adjusted read levels, the read scan operation may prevent, avoid, or correct potential data errors. In one embodiment, the read scan operation determines the adjusted read levels, adjusted read level B 702, adjusted read level E 704, and adjusted read level G 706, reactively, after a bit error rate crosses a threshold. In another embodiment, the read scan operation determines the adjusted read levels proactively based on operating conditions and media characteristics for a corresponding set of memory cells.
Notes
Added by DJM 12 2021
Raw Data
<w:p w14:paraId="68564913" w14:textId="77777777" w:rsidR="00B6556D" w:rsidRDefault="00B6556D"><w:r><w:t xml:space="preserve">The adjusted read levels align with the changed cell threshold voltage distributions. Were previous read levels, such as previous read level B 708, previous read level E 710, previous read level G 712 used, the memory cells near the boundaries would register data errors. Similarly, because the charge levels of the different memory states A, D, and G have drifted, leaked, been disturbed, or the like by different amounts, and/or in different directions, using the same adjustment for each memory state B, E, and G, in certain embodiments, may register data errors. By configuring the corresponding set of storage cells to use the individually adjusted read levels, the read scan operation may prevent, avoid, or correct potential data errors. In one embodiment, the read scan operation determines the adjusted read levels, adjusted read level B 702, adjusted read level E 704, and adjusted read level G 706, reactively, after a bit error rate crosses a threshold. In another embodiment, the read scan operation determines the adjusted read levels proactively based on operating conditions and media characteristics for a corresponding set of memory cells. </w:t></w:r></w:p>
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