16869424

Paragraph Number

191

In the example illustrated, adjustments to create adjusted read level B 802, adjusted read level E 804, and adjusted read level G 806 have been made. The previous read levels are also indicated as previous read level B 808, previous read level E 810, and previous read level G 812. The read scan operation, in one embodiment, determines different adjustments to the previous read levels, resulting in the adjusted read levels. The read scan operation may determine adjustment 814, adjustment 816, and adjustment 818 individually for the different memory states B, E, and G, with different magnitudes, different directions, and the like, customizing the different adjustment levels, adjusted read level B 802, adjusted read level E 804, adjusted read level G 806 individually to media characteristics of the different memory states B, E, and G. Each memory state Er, A, B, C, etc., through O as illustrated in FIG. 4 may receive this treatment. A subset of the memory states, Er through G, are illustrated here for convenience. The adjusted read levels align with the changed cell threshold voltage distributions.

Added by DJM 12 2021