6423

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

183

Content

One may observe that an increasing threshold voltage shift 720 of memory state D 730 is often accompanied by a decreasing threshold voltage shift 722 of memory state G 732. This relationship is another example of a correlation. Because the increasing threshold voltage shift 720 in memory state D 730 and the decreasing threshold voltage shift 722 in memory state G 732 occur in opposite directions, this correlation is referred to as a negative shift correlation 726. "Negative correlation" refers to a correlation in which two or more correlated things respond in an opposite manner to a particular influence, environment, action, or stimuli. For example, where threshold voltages of memory cells are represented by cell threshold voltage distributions and the cell threshold voltage distributions are mapped to memory states, memory cells within a first memory state are negatively correlated to memory cells within a second memory state when the correlated attribute changes in the opposite direction for the memory cells of the first memory state and the memory cells of the second memory state.

Notes

Added by DJM 12 2021