16869424
Paragraph Number190
6430
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
FIG. 8 illustrates another change phenomena for memory cells and the corresponding a cell threshold voltage distribution(s), e.g., the curves. FIG. 8 illustrates that certain memory states may have a correlation to another memory state based on a widening or narrowing of the cell threshold voltage distribution(s), referred to herein as width correlations. Those of still in the art may appreciate that certain non-volatile storage media technologies may, or may not, experience one, or the other, or both of the types of width correlations (widening and narrowing). However, the concepts disclosed and claimed herein apply to non-volatile storage media technologies that experience or one, or the other, or both of the width correlations. "Width correlation" refers to a correlation in which memory cells of a cell threshold voltage distribution within a first memory state change threshold voltage in a manner that widens or narrows a curve representing the cell threshold voltage distribution within the first memory state in response to passage of time, or use of a storage device, in a manner that correlates to a change of threshold voltage in a manner that widens or narrows a curve representing the cell threshold voltage distribution within the second memory state.
Added by DJM 12 2021