6430

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

190

Content

FIG. 8 illustrates another change phenomena for memory cells and the corresponding a cell threshold voltage distribution(s), e.g., the curves. FIG. 8 illustrates that certain memory states may have a correlation to another memory state based on a widening or narrowing of the cell threshold voltage distribution(s), referred to herein as width correlations. Those of still in the art may appreciate that certain non-volatile storage media technologies may, or may not, experience one, or the other, or both of the types of width correlations (widening and narrowing). However, the concepts disclosed and claimed herein apply to non-volatile storage media technologies that experience or one, or the other, or both of the width correlations. "Width correlation" refers to a correlation in which memory cells of a cell threshold voltage distribution within a first memory state change threshold voltage in a manner that widens or narrows a curve representing the cell threshold voltage distribution within the first memory state in response to passage of time, or use of a storage device, in a manner that correlates to a change of threshold voltage in a manner that widens or narrows a curve representing the cell threshold voltage distribution within the second memory state.

Notes

Added by DJM 12 2021