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Dave's PCF WIP: Paragraphs

6421

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

181

Content

Specifically, because the increasing threshold voltage shift 720 of memory state A occurs in the same direction as the increasing threshold voltage shift 720 of memory state D, the correlation between them is referred to as a positive shift correlation 724. "Positive correlation" refers to a correlation in which two or more correlated things respond in the same manner to a particular influence, environment, action, or stimuli. For example, where threshold voltages of memory cells are represented by cell threshold voltage distributions and the cell threshold voltage distributions are mapped to memory states, memory cells within a first memory state are positively correlated to memory cells within a second memory state when the correlated attribute changes in the same direction for the memory cells of the first memory state and the memory cells of the second memory state.

Notes

Added by DJM 12 2021