Paragraph 192
Paragraph 192
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
192
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,432
Content
Whereas FIG. 7 illustrated shifting of memory states and shift correlations between memory states, FIG. 8 illustrates an example of correlations between memory states based on a change in width of two cell threshold voltage distributions. Some memory states may exhibit an increasing width 820 while others exhibit a decreasing width (narrowing) 822. In the illustrated example, an increasing width 820 of memory state A 824 may necessitate the adjustment 814 resulting in the adjusted read level B 802. An increasing width 820 in memory state D 826 may similarly result in adjusted read level E 804, whereas a decreasing width (narrowing) 822 of memory state G 830 may yield adjusted read level G 806.
Notes
Added by DJM 12 2021