Paragraph 184
Paragraph 184
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
184
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,424
Content
Said another way, if the correlated attribute increases for the memory cells of the first memory state and the correlated attribute decreases for the memory cells of the second memory state, this is a negative correlation. In certain embodiments, the correlated attribute may comprise a threshold voltage, or change in a cell threshold voltage distribution for a set of memory cells in memory states.
Notes
Added by DJM 12 2021