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Paragraph Number184
6424
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
Said another way, if the correlated attribute increases for the memory cells of the first memory state and the correlated attribute decreases for the memory cells of the second memory state, this is a negative correlation. In certain embodiments, the correlated attribute may comprise a threshold voltage, or change in a cell threshold voltage distribution for a set of memory cells in memory states.
Notes
Added by DJM 12 2021