16869424
Paragraph Number177
6417
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
As is illustrated here, an increasing threshold voltage shift 720 of memory state A may necessitate adjustment 714 resulting in an adjusted read level B 702 (wherein read level B demarcates the transition between memory state A and memory state B). Similarly, an increasing threshold voltage shift 720 of memory state D may necessitate adjustment 716 to adjusted read level E 704. A decreasing threshold voltage shift 722 to memory state G, on the other hand, may necessitate adjustment 718 to adjusted read level G 706, based on the illustrated example in FIG. 7.
Notes
Added by DJM 12 2021