16869424

Paragraph Number

177

As is illustrated here, an increasing threshold voltage shift 720 of memory state A may necessitate adjustment 714 resulting in an adjusted read level B 702 (wherein read level B demarcates the transition between memory state A and memory state B). Similarly, an increasing threshold voltage shift 720 of memory state D may necessitate adjustment 716 to adjusted read level E 704. A decreasing threshold voltage shift 722 to memory state G, on the other hand, may necessitate adjustment 718 to adjusted read level G 706, based on the illustrated example in FIG. 7.

Added by DJM 12 2021