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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
181
Application Number
16869424
Reference Case 1
Reference Case 2
Content
Specifically, because the increasing threshold voltage shift 720 of memory state A occurs in the same direction as the increasing threshold voltage shift 720 of memory state D, the correlation between them is referred to as a positive shift correlation 724. "Positive correlation" refers to a correlation in which two or more correlated things respond in the same manner to a particular influence, environment, action, or stimuli. For example, where threshold voltages of memory cells are represented by cell threshold voltage distributions and the cell threshold voltage distributions are mapped to memory states, memory cells within a first memory state are positively correlated to memory cells within a second memory state when the correlated attribute changes in the same direction for the memory cells of the first memory state and the memory cells of the second memory state.
Notes
Added by DJM 12 2021
Raw Data
<w:p w14:paraId="2275CE2B" w14:textId="77777777" w:rsidR="00B6556D" w:rsidRDefault="00B6556D"><w:r><w:t xml:space="preserve">Specifically, because the increasing threshold voltage shift 720 of memory state A occurs in the same direction as the increasing threshold voltage shift 720 of memory state D, the correlation between them is referred to as a positive shift correlation 724. "Positive correlation" refers to a correlation in which two or more correlated things respond in the same manner to a particular influence, environment, action, or stimuli. For example, where threshold voltages of memory cells are represented by cell threshold voltage distributions and the cell threshold voltage distributions are mapped to memory states, memory cells within a first memory state are positively correlated to memory cells within a second memory state when the correlated attribute changes in the same direction for the memory cells of the first memory state and the memory cells of the second memory state. </w:t></w:r></w:p>
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