"Phase change storage cell" refers to a two terminal storage cell comprising a chalcogenide material configured to provide a detectable electrical resistance when the chalcogenide material is in crystalline state and a distinguishable electrical resistance when the chalcogenide material is in an amorphous state. In certain embodiments, a phase change storage cell may include a heater for changing the state of the chalcogenide material. In another embodiment, electric current passing through the phase change storage cell sufficiently heats the chalcogenide material to cause the phase transition from crystalline to amorphous or vice versa.In certain embodiments, the chalcogenide material may be a compound of Germanium, Antimony, and Tellurium Ge2Sb2Te5 (GST). Those of skill in the art will recognize that other forms of chalcogenide material may be used with a phase change storage cell. … more "Phase change storage cell" refers to a two terminal storage cell comprising a chalcogenide material configured to provide a detectable electrical resistance when the chalcogenide material is in crystalline state and a distinguishable electrical resistance when the chalcogenide material is in an amorphous state. In certain embodiments, a phase change storage cell may include a heater for changing the state of the chalcogenide material. In another embodiment, electric current passing through the phase change storage cell sufficiently heats the chalcogenide material to cause the phase transition from crystalline to amorphous or vice versa.In certain embodiments, the chalcogenide material may be a compound of Germanium, Antimony, and Tellurium Ge2Sb2Te5 (GST). Those of skill in the art will recognize that other forms of chalcogenide material may be used with a phase change storage cell.

"Deposition" refers to a phase transition in which gas transforms into solid without passing through the liquid phase. Deposition is a thermodynamic process. The reverse of deposition is sublimation and hence sometimes deposition is called desublimation. (Search "deposition" on Wikipedia.com March 3, 2020. Accessed April 3, 2020.) Deposition is one of many processes that may be used in microfabrication of an integrated semiconductor device or structure. Principles and mechanics of deposition are used in the manufacture or generation of thin film layers and/or structures and are referred to as thin film deposition. … more "Deposition" refers to a phase transition in which gas transforms into solid without passing through the liquid phase. Deposition is a thermodynamic process. The reverse of deposition is sublimation and hence sometimes deposition is called desublimation. (Search "deposition" on Wikipedia.com March 3, 2020. Accessed April 3, 2020.) Deposition is one of many processes that may be used in microfabrication of an integrated semiconductor device or structure. Principles and mechanics of deposition are used in the manufacture or generation of thin film layers and/or structures and are referred to as thin film deposition.

"Di-nickel silicide layer" refers to a thin film of di-nickel silicide represented by the symbol Ni2Si. … more "Di-nickel silicide layer" refers to a thin film of di-nickel silicide represented by the symbol Ni2Si.

"Storage cell" refers to a type of storage media configured to represent one or more binary values by way of a determinable characteristic of the storage media when the storage media is sensed, read, or detected to determine a binary value(s) stored, or represented by, the determinable characteristic of the memory cell. Storage cell and memory cell are used interchangeably herein. … more "Storage cell" refers to a type of storage media configured to represent one or more binary values by way of a determinable characteristic of the storage media when the storage media is sensed, read, or detected to determine a binary value(s) stored, or represented by, the determinable characteristic of the memory cell. Storage cell and memory cell are used interchangeably herein.

"Thickness" refers to a dimension for a structure (e.g. Integrated Circuit Semiconductor (ICS)), material layer, and/or thin film formed by way of a microfabrication process. As used herein, thickness refers to a measurement from a bottom of an ISC or thin film to a top of the ISC or thin film where the bottom and top run parallel to an X-axis of an X-Y coordinate axis and the thickness is measured parallel to the Y-axis.  … more "Thickness" refers to a dimension for a structure (e.g. Integrated Circuit Semiconductor (ICS)), material layer, and/or thin film formed by way of a microfabrication process. As used herein, thickness refers to a measurement from a bottom of an ISC or thin film to a top of the ISC or thin film where the bottom and top run parallel to an X-axis of an X-Y coordinate axis and the thickness is measured parallel to the Y-axis. 

"Etching" refers to one of many processes that may be used in microfabrication of an integrated semiconductor device or structure. Often, etching is used to selectively remove one material while leaving other materials mainly unchanged. In one embodiment, etching is used to chemically remove layers, such as a thin film, from a surface of a wafer during manufacturing. (Search "etching (microfabrication)" on Wikipedia.com Sept. 23, 2019. Edited, Accessed April 3, 2020.)Examples of etching include wet etching, dry etching, reactive ion etching, and plasma etching. Those of skill in the art will recognize these types of etching and how these types and future developed types may be used in connection with the disclosed solutions. … more "Etching" refers to one of many processes that may be used in microfabrication of an integrated semiconductor device or structure. Often, etching is used to selectively remove one material while leaving other materials mainly unchanged. In one embodiment, etching is used to chemically remove layers, such as a thin film, from a surface of a wafer during manufacturing. (Search "etching (microfabrication)" on Wikipedia.com Sept. 23, 2019. Edited, Accessed April 3, 2020.)Examples of etching include wet etching, dry etching, reactive ion etching, and plasma etching. Those of skill in the art will recognize these types of etching and how these types and future developed types may be used in connection with the disclosed solutions.

"Exposed top silicon layer" refers to a top silicon layer that has been covered or coated in a prior process step or is currently covered or coated and is subsequently exposed by one or more of etching, selective material removal process, chemical mechanical polishing process, a mechanical polishing process, and/or the like. … more "Exposed top silicon layer" refers to a top silicon layer that has been covered or coated in a prior process step or is currently covered or coated and is subsequently exposed by one or more of etching, selective material removal process, chemical mechanical polishing process, a mechanical polishing process, and/or the like.

"Dielectric" refers to an electrical insulator that can be polarized by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor but slightly shift from their average equilibrium positions causing dielectric polarization. (Search "dielectric" on Wikipedia.com March 8, 2020. Edited. Accessed April 3, 2020.) … more "Dielectric" refers to an electrical insulator that can be polarized by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor but slightly shift from their average equilibrium positions causing dielectric polarization. (Search "dielectric" on Wikipedia.com March 8, 2020. Edited. Accessed April 3, 2020.)

"Sacrificial layer" refers to a layer of material, typically a thin film, used in microfabrication to temporarily create one or more structures for certain steps of a microfabrication process. In certain embodiments, the sacrificial layer is temporary because once the microfabrication process completes the sacrificial layer has been removed or rendered inactive with respect to structures and/or devices formed in in a microfabrication process. … more "Sacrificial layer" refers to a layer of material, typically a thin film, used in microfabrication to temporarily create one or more structures for certain steps of a microfabrication process. In certain embodiments, the sacrificial layer is temporary because once the microfabrication process completes the sacrificial layer has been removed or rendered inactive with respect to structures and/or devices formed in in a microfabrication process.

"Selector" refers to a switch configured to control when a phase change storage cell receives current. In one embodiment, the selector is an ovonic threshold switch (OTS) which is a two-terminal symmetrical voltage sensitive switching device. (Roy R. Shanks, “Ovonic threshold switching characteristics”, Journal of Non-Crystalline Solids, Elsevier, Jan. 1970.) … more "Selector" refers to a switch configured to control when a phase change storage cell receives current. In one embodiment, the selector is an ovonic threshold switch (OTS) which is a two-terminal symmetrical voltage sensitive switching device. (Roy R. Shanks, “Ovonic threshold switching characteristics”, Journal of Non-Crystalline Solids, Elsevier, Jan. 1970.)

"Thin film" refers to a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications such as the manufacture of patterned storage media, magnetic recording media, electronic semiconductor devices, Light Emitting Diodes LEDs, storage cells, and the like.  (Search "thin film" on Wikipedia.com April 1, 2020. Accessed April 3, 2020.) … more "Thin film" refers to a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications such as the manufacture of patterned storage media, magnetic recording media, electronic semiconductor devices, Light Emitting Diodes LEDs, storage cells, and the like.  (Search "thin film" on Wikipedia.com April 1, 2020. Accessed April 3, 2020.)

"Cell film stack" refers to a multi-layer stack of two or more thin films configured to function as a storage cell (also referred to as a memory cell). In general, one or more terminals connect, or couple, to corresponding portions of the cell film stack to connect a single storage cell into a larger structure such as a non-volatile memory array which may be configured as a cross-point array. … more "Cell film stack" refers to a multi-layer stack of two or more thin films configured to function as a storage cell (also referred to as a memory cell). In general, one or more terminals connect, or couple, to corresponding portions of the cell film stack to connect a single storage cell into a larger structure such as a non-volatile memory array which may be configured as a cross-point array.

"Dielectric film" refers to a thin film of a dielectric. … more "Dielectric film" refers to a thin film of a dielectric.

"Mega-ohms per centimeter" refers to a unit of measure for electrical resistance in electrodes, terminals, control lines, or other very small structures. … more "Mega-ohms per centimeter" refers to a unit of measure for electrical resistance in electrodes, terminals, control lines, or other very small structures.

"Silicon layer" refers to a thin film layer of silicon. … more "Silicon layer" refers to a thin film layer of silicon.

"Nickel layer" refers to a thin film of nickel. … more "Nickel layer" refers to a thin film of nickel.

"Residual silicon layer" refers to an amount of silicon film, remaining after a selective material removal process and/or a silicidation process. … more "Residual silicon layer" refers to an amount of silicon film, remaining after a selective material removal process and/or a silicidation process.

"Dielectric chemical mechanical polishing process" refers to a chemical mechanical polishing process adapted for removal and or polishing of layers of a dielectric. … more "Dielectric chemical mechanical polishing process" refers to a chemical mechanical polishing process adapted for removal and or polishing of layers of a dielectric.