"Shift correlation" refers to a correlation in which memory cells of a cell threshold voltage distribution within a first memory state change or shift in threshold voltage (either increasing or decreasing) in response to passage of time, or use of a storage device, in a manner that correlates to a change or shift in threshold voltage (either increasing or decreasing) for memory cells of a cell threshold voltage distribution within a second memory state. … more "Shift correlation" refers to a correlation in which memory cells of a cell threshold voltage distribution within a first memory state change or shift in threshold voltage (either increasing or decreasing) in response to passage of time, or use of a storage device, in a manner that correlates to a change or shift in threshold voltage (either increasing or decreasing) for memory cells of a cell threshold voltage distribution within a second memory state.

"Read level window" refers to a set of candidate read levels that may serve as a read level between two adjacent memory states. In certain embodiments, where the memory cells that are read a read using one or more threshold voltages, a read level window may comprise a set of threshold voltages between a low threshold voltage and a high threshold voltage, with each member of the set of candidate read levels within the read level window comprising a distinct threshold voltage.In another embodiment comprise NAND memory cells, a read level window may comprise a set of threshold voltages between a low threshold voltage and a high threshold voltage, with each member of the set of candidate read levels within the read level window comprising a threshold voltage offset by one or more offset amounts from a default read level, such as a current read level. The offsets from the default read level may be both greater than and/or less than the default read level. A read level window may also be referred to as a “scanning” window. … more "Read level window" refers to a set of candidate read levels that may serve as a read level between two adjacent memory states. In certain embodiments, where the memory cells that are read a read using one or more threshold voltages, a read level window may comprise a set of threshold voltages between a low threshold voltage and a high threshold voltage, with each member of the set of candidate read levels within the read level window comprising a distinct threshold voltage.In another embodiment comprise NAND memory cells, a read level window may comprise a set of threshold voltages between a low threshold voltage and a high threshold voltage, with each member of the set of candidate read levels within the read level window comprising a threshold voltage offset by one or more offset amounts from a default read level, such as a current read level. The offsets from the default read level may be both greater than and/or less than the default read level. A read level window may also be referred to as a “scanning” window.

"Cash flow stream" refers to a projected cash flow for a specific part of a company. In one embodiment, at a broad level, the cash flow represents cash flow for all operations of a company and is analogized to a river.  Consequently, a cash stream is also a cash flow but represents a smaller portion of all of the operations of the company and therefore is analogized to a stream which is smaller than, and feeds into a river.A cash flow stream is a projection of financial data representing cash flows, in or out, relating to a particular type of business transaction, such as income or expenses. The claimed solutions may generate streams in a number of ways, including, without limitation, auto-generated with tags, user-defined scripts that a serverless cloud computing platform may execute, or manually with user-generated content using entered data or user uploaded files, such as a spreadsheet.Said another way, a cash flow is a grouping of financial transactions and other business activity that affects a company’s cash position and a cash stream is a subset of that grouping of financial transactions and other business activity that affects a company’s cash position. “Cash flow stream” and “stream” are used synonymously herein to mean a cash stream and references to "stream" with an adjective such as in “revenue stream” are synonymous with the term “revenue cash stream.” Examples of a cash flow stream include, but are not limited to, revenue stream, general expenses stream, accounts payable stream, accounts receivable stream, inventory stream, capital expenditures stream, payroll stream, financing stream, and the like. In one embodiment, a cash stream may be defined to include an exclusive grouping of cash uses, such as expenses and / or other business activities that use cash. In one embodiment, a cash stream may be defined to include an exclusive grouping of cash sources, such as revenue, accounts receivable payments, and / or other business activities that use cash. In yet another embodiment, a cash stream may be defined to include a grouping of both cash uses, such as expenses, and cash sources, such as revenue. … more "Cash flow stream" refers to a projected cash flow for a specific part of a company. In one embodiment, at a broad level, the cash flow represents cash flow for all operations of a company and is analogized to a river.  Consequently, a cash stream is also a cash flow but represents a smaller portion of all of the operations of the company and therefore is analogized to a stream which is smaller than, and feeds into a river.A cash flow stream is a projection of financial data representing cash flows, in or out, relating to a particular type of business transaction, such as income or expenses. The claimed solutions may generate streams in a number of ways, including, without limitation, auto-generated with tags, user-defined scripts that a serverless cloud computing platform may execute, or manually with user-generated content using entered data or user uploaded files, such as a spreadsheet.Said another way, a cash flow is a grouping of financial transactions and other business activity that affects a company’s cash position and a cash stream is a subset of that grouping of financial transactions and other business activity that affects a company’s cash position. “Cash flow stream” and “stream” are used synonymously herein to mean a cash stream and references to "stream" with an adjective such as in “revenue stream” are synonymous with the term “revenue cash stream.” Examples of a cash flow stream include, but are not limited to, revenue stream, general expenses stream, accounts payable stream, accounts receivable stream, inventory stream, capital expenditures stream, payroll stream, financing stream, and the like. In one embodiment, a cash stream may be defined to include an exclusive grouping of cash uses, such as expenses and / or other business activities that use cash. In one embodiment, a cash stream may be defined to include an exclusive grouping of cash sources, such as revenue, accounts receivable payments, and / or other business activities that use cash. In yet another embodiment, a cash stream may be defined to include a grouping of both cash uses, such as expenses, and cash sources, such as revenue.

"Lever" refers to a characteristic or attribute relating to a cash forecast. A lever is similar to a factor, except that a lever affects an entire forecast (e.g., all streams and factors) at a macro level. … more "Lever" refers to a characteristic or attribute relating to a cash forecast. A lever is similar to a factor, except that a lever affects an entire forecast (e.g., all streams and factors) at a macro level.

"Memory cell" refers to a type of storage media configured to represent one or more binary values by way of a determinable physical characteristic of the storage media when the storage media is sensed, read, or detected to determine what binary value(s) was last stored in the memory cell. Memory cell and storage cell are used interchangeably herein. … more "Memory cell" refers to a type of storage media configured to represent one or more binary values by way of a determinable physical characteristic of the storage media when the storage media is sensed, read, or detected to determine what binary value(s) was last stored in the memory cell. Memory cell and storage cell are used interchangeably herein.

"Microfabrication" refers to the process of fabricating miniature structures of micrometer scales and smaller. Microfabrication processes may be used for integrated circuit fabrication, also known as "semiconductor manufacturing," "semiconductor processing," "semiconductor process integration," or "semiconductor device fabrication".A variety of processes for depositing, forming, growing, micro-forming, or adding structures and/or thin films of material to a substrate (e.g., additive material fabrication) and/or patterning, lithography, removing, etching, or dissolving of structures, and/or thin films of material from a substrate (e.g., selective material removal). Examples of such processes include, but are not limited to, deposition, etching, lithography, and the like.In the last two decades, microelectromechanical systems (MEMS), microsystems (European usage), micromachines (Japanese terminology) and their subfields, microfluidics/lab-on-a-chip, optical MEMS (also called MOEMS), RF MEMS, PowerMEMS, BioMEMS and their extension into nanoscale (for example NEMS, for nano electro mechanical systems) have re-used, adapted or extended microfabrication methods. (Search "microfabrication" on Wikipedia.com Jan. 11, 2020. Edited, Accessed April 3, 2020.) … more "Microfabrication" refers to the process of fabricating miniature structures of micrometer scales and smaller. Microfabrication processes may be used for integrated circuit fabrication, also known as "semiconductor manufacturing," "semiconductor processing," "semiconductor process integration," or "semiconductor device fabrication".A variety of processes for depositing, forming, growing, micro-forming, or adding structures and/or thin films of material to a substrate (e.g., additive material fabrication) and/or patterning, lithography, removing, etching, or dissolving of structures, and/or thin films of material from a substrate (e.g., selective material removal). Examples of such processes include, but are not limited to, deposition, etching, lithography, and the like.In the last two decades, microelectromechanical systems (MEMS), microsystems (European usage), micromachines (Japanese terminology) and their subfields, microfluidics/lab-on-a-chip, optical MEMS (also called MOEMS), RF MEMS, PowerMEMS, BioMEMS and their extension into nanoscale (for example NEMS, for nano electro mechanical systems) have re-used, adapted or extended microfabrication methods. (Search "microfabrication" on Wikipedia.com Jan. 11, 2020. Edited, Accessed April 3, 2020.)

"Layer of unreacted nickel" refers to a thin film of nickel that did not diffuse or react with adjacent materials during a thermal reaction process. … more "Layer of unreacted nickel" refers to a thin film of nickel that did not diffuse or react with adjacent materials during a thermal reaction process.

"Chemical mechanical polishing process" (CMP), also known as "planarization", refers to a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing. The process uses an abrasive and corrosive chemical slurry (commonly a colloid) in conjunction with a polishing pad and retaining ring, typically of a greater diameter than the wafer. The pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head is rotated with different axes of rotation (i.e., not concentric). This removes material and tends to even out any irregular topography, making the wafer flat or planar. CMP polishing and/or leveling may be done to set up the wafer for the formation of additional circuit elements. For example, CMP can bring the entire surface within the depth of field of a photolithography system, or selectively remove material based on its position. Typical depth-of-field requirements are down to Angstrom levels for the latest 22 nm technology. (Search "chemical mechanical polishing" on Wikipedia.com Oct. 21, 2020. Edited. Accessed March 25, 2020.) … more "Chemical mechanical polishing process" (CMP), also known as "planarization", refers to a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing. The process uses an abrasive and corrosive chemical slurry (commonly a colloid) in conjunction with a polishing pad and retaining ring, typically of a greater diameter than the wafer. The pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head is rotated with different axes of rotation (i.e., not concentric). This removes material and tends to even out any irregular topography, making the wafer flat or planar. CMP polishing and/or leveling may be done to set up the wafer for the formation of additional circuit elements. For example, CMP can bring the entire surface within the depth of field of a photolithography system, or selectively remove material based on its position. Typical depth-of-field requirements are down to Angstrom levels for the latest 22 nm technology. (Search "chemical mechanical polishing" on Wikipedia.com Oct. 21, 2020. Edited. Accessed March 25, 2020.)

"Thermal solid-state reaction" refers to reactions performed in the absence of solvents by either grinding or melting the starting materials together or simply applying heat to a mixture of starting materials. This type of reaction is usually performed in order to obtain polycrystalline inorganic solids but may also be used in organic synthesis. Solid state reactions offer reduced costs, decreased amounts of chemical waste and, sometimes, an increase in yield. (See LaboChema website labochema.com search solid-state reaction. Last visited April 3, 2020) … more "Thermal solid-state reaction" refers to reactions performed in the absence of solvents by either grinding or melting the starting materials together or simply applying heat to a mixture of starting materials. This type of reaction is usually performed in order to obtain polycrystalline inorganic solids but may also be used in organic synthesis. Solid state reactions offer reduced costs, decreased amounts of chemical waste and, sometimes, an increase in yield. (See LaboChema website labochema.com search solid-state reaction. Last visited April 3, 2020)

"Crystallite" refers to a small or even microscopic crystal which forms, for example, during the cooling of many materials. The orientation of crystallites can be random with no preferred direction, called random texture, or directed, possibly due to growth and processing conditions. Fiber texture is an example of the latter. Crystallites are also referred to as grains. (Search "crystallite" on Wikipedia.com Feb. 14, 2020. Accessed April 3, 2020.) … more "Crystallite" refers to a small or even microscopic crystal which forms, for example, during the cooling of many materials. The orientation of crystallites can be random with no preferred direction, called random texture, or directed, possibly due to growth and processing conditions. Fiber texture is an example of the latter. Crystallites are also referred to as grains. (Search "crystallite" on Wikipedia.com Feb. 14, 2020. Accessed April 3, 2020.)

"Non-volatile memory array" refers to a set of non-volatile storage cells (also referred to as memory cells or non-volatile memory cells) organized into an array structure having rows and columns. A memory array is addressable using a row identifier and a column identifier. … more "Non-volatile memory array" refers to a set of non-volatile storage cells (also referred to as memory cells or non-volatile memory cells) organized into an array structure having rows and columns. A memory array is addressable using a row identifier and a column identifier.

"Bit line" refers to a circuit structure configured to deliver a voltage and/or conduct current to a column of a memory array.  In one embodiment, the column comprises a NAND string or memory string and may also be referred to as channel. In one embodiment, the column is referred to as a NAND string and the NAND string comprises a channel. In one embodiment, a bit line connects to a NAND string at a drain end or drain side of the NAND string. A memory array may have one bit line for each memory cell along the word lines of the memory array. … more "Bit line" refers to a circuit structure configured to deliver a voltage and/or conduct current to a column of a memory array.  In one embodiment, the column comprises a NAND string or memory string and may also be referred to as channel. In one embodiment, the column is referred to as a NAND string and the NAND string comprises a channel. In one embodiment, a bit line connects to a NAND string at a drain end or drain side of the NAND string. A memory array may have one bit line for each memory cell along the word lines of the memory array.

"Single grain boundary" refers to an interface between two grains, or crystallites, in a polycrystalline material. Grain boundaries are 2D defects in the crystal structure and tend to decrease the electrical and thermal conductivity of the material. (Search "grain boundary" on Wikipedia.com Nov. 30. 2019. Accessed April 3, 2020.) … more "Single grain boundary" refers to an interface between two grains, or crystallites, in a polycrystalline material. Grain boundaries are 2D defects in the crystal structure and tend to decrease the electrical and thermal conductivity of the material. (Search "grain boundary" on Wikipedia.com Nov. 30. 2019. Accessed April 3, 2020.)

"Non-volatile memory media" refers to any hardware, device, component, element, or circuit configured to maintain an alterable physical characteristic used to represent a binary value of zero or one after a primary power source is removed. Examples of the alterable physical characteristic include, but are not limited to, a threshold voltage for a transistor, an electrical resistance level of a memory cell, a current level through a memory cell, a magnetic pole orientation, a spin-transfer torque, and the like. … more "Non-volatile memory media" refers to any hardware, device, component, element, or circuit configured to maintain an alterable physical characteristic used to represent a binary value of zero or one after a primary power source is removed. Examples of the alterable physical characteristic include, but are not limited to, a threshold voltage for a transistor, an electrical resistance level of a memory cell, a current level through a memory cell, a magnetic pole orientation, a spin-transfer torque, and the like.

"Nickel monosilicide" refers to a monosilicide that includes a single nickel atom per molecule or unit cell of silicon.  Nickel monosilicide is represented by the symbol NiSi. … more "Nickel monosilicide" refers to a monosilicide that includes a single nickel atom per molecule or unit cell of silicon.  Nickel monosilicide is represented by the symbol NiSi.

"Nickel monosilicide chemical mechanical polishing process" refers to a chemical mechanical polishing process adapted for removal and or polishing of layers of nickel monosilicide. … more "Nickel monosilicide chemical mechanical polishing process" refers to a chemical mechanical polishing process adapted for removal and or polishing of layers of nickel monosilicide.

"Wafer" refers to a very thin slice of a semiconductor crystal used as the substrate for solid-state circuitry. (Search "wafer" on lexico.com © 2020 Lexico.com. Accessed April 3, 2020.) … more "Wafer" refers to a very thin slice of a semiconductor crystal used as the substrate for solid-state circuitry. (Search "wafer" on lexico.com © 2020 Lexico.com. Accessed April 3, 2020.)

"Nickel monosilicide layer" refers to a thin film of nickel monosilicide. … more "Nickel monosilicide layer" refers to a thin film of nickel monosilicide.

"Top silicon layer" refers to a layer of silicon on top of a substrate, cell film stack, wafer, or the like. … more "Top silicon layer" refers to a layer of silicon on top of a substrate, cell film stack, wafer, or the like.

"Monosilicide electrode" refers to an electrode made from a silicide comprising a single silicon atom per molecule or unit cell. A silicide is a compound of silicon and another element, usually a metal (Search “silicide” and “monosilicide” on yourdictionary.com © 1996-2020 LoveToKnow, Corp. Accessed April 3, 2020.) … more "Monosilicide electrode" refers to an electrode made from a silicide comprising a single silicon atom per molecule or unit cell. A silicide is a compound of silicon and another element, usually a metal (Search “silicide” and “monosilicide” on yourdictionary.com © 1996-2020 LoveToKnow, Corp. Accessed April 3, 2020.)