Dave's PCF WIP: Paragraphs

Paragraphs

Actions	Matter	Content	Para #	Notes	Modified
View Edit Delete	ONSO3305US - Onsemi346	singulating through each of the semiconductor die and a metal layer to expose one or more inner terminals of first RDL on the cover glass;	99	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	ONSO3305US - Onsemi346	forming an isolation layer around each of the plurality of semiconductor die;	100	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	ONSO3305US - Onsemi346	forming a second redistribution layer (RDL), the second RDL extending from the inner terminals of the first RDL to the first side of each of the plurality of semiconductor die;	101	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	ONSO3305US - Onsemi346	forming a passivation layer over the first side of each of the semiconductor die; and	102	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	ONSO3305US - Onsemi346	singulating through the passivation layer and the optically transmissive substrate to form a plurality of semiconductor packages.	103	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	ONSO3305US - Onsemi346	15. The method of claim 14, wherein etching comprises angling one or more sidewalls of the semiconductor wafer.	104	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	ONSO3305US - Onsemi346	16.The method of claim 15, wherein the one or more sidewalls of the semiconductor die are angled between 85 degrees and 60 degrees from a plane formed by the first side of the semiconductor die.	105	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	ONSO3305US - Onsemi346	17. The method of claim 14, further comprising forming one or more dams on the first redistribution layer.	106	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	ONSO3305US - Onsemi346	18.The method of claim 14, wherein a width of the scribe lines is less than 150 microns.	107	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	ONSO3305US - Onsemi346	19.The method of claim 14, wherein each of the two or more die pads comprise a pad pitch of substantially 60 microns.	108	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	ONSO3305US - Onsemi346	20.The method of claim 14, wherein each of the two or more die pads comprise a pad pitch of substantially 70 microns.	109	Added by DJM 3 2021	3/3/21, 12:00 AM
View Edit Delete	US-20150012794-A1	Claim 2.The method of claim 1, further comprising	164	Added by DJM 2 2021	2/22/21, 12:00 AM
View Edit Delete	US-20150012794-A1	Claim 9.The method of claim 1, wherein the second ECC code word is nested within the first ECC code word such that the first and second ECC code words provide error protection for the same data.	173	Added by DJM 2 2021	2/22/21, 12:00 AM
View Edit Delete	US-20150012794-A1	Claim 8.The method of claim 1, wherein data of the second ECC code word comprises a header for one or more additional ECC code words of the non-volatile storage device.	172	Added by DJM 2 2021	2/22/21, 12:00 AM
View Edit Delete	US-20150012794-A1	Claim 7.The method of claim 1, wherein the one or more media parameters comprise one or more read voltage thresholds.	171	Added by DJM 2 2021	2/22/21, 12:00 AM
View Edit Delete	US-20150012794-A1	Claim 6.The method of claim 1, further comprising iteratively reading the second ECC code word from the non-volatile storage device using the adjusted media parameters, determining the error information, and adjusting one or more media parameters, until the first ECC code word is correctable using the first error correcting code.	170	Added by DJM 2 2021	2/22/21, 12:00 AM
View Edit Delete	US-20150012794-A1	Claim 5.The method of claim 1, wherein the second error correcting code comprises a balanced code and the error information comprises information indicating a balance of the second ECC code word.	169	Added by DJM 2 2021	2/22/21, 12:00 AM
View Edit Delete	US-20150012794-A1	Claim 4.The method of claim 1, wherein the decoder for the second error correcting code comprises a soft-decision decoder.	168	Added by DJM 2 2021	2/22/21, 12:00 AM
View Edit Delete	US-20150012794-A1	Claim 3.The method of claim 1, wherein the second error correcting code comprises a repetition error correcting code.	167	Added by DJM 2 2021	2/22/21, 12:00 AM
View Edit Delete	US-20150012794-A1	deriving analog information from repeated messages of the repetition error correcting code in response to determining that the second ECC code word is uncorrectable using the repetition error correcting code, wherein determining that the second ECC code word is correctable using the second error correcting code comprises using the analog information to inform the decoder for the second error correcting code.	166	Added by DJM 2 2021	2/22/21, 12:00 AM

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