“toggle rate” refers to the time between the rising and falling edges of a clock pulse, and hence for periodic clock pulses defines the frequency at which the clock signal can trigger other circuits. … more “toggle rate” refers to the time between the rising and falling edges of a clock pulse, and hence for periodic clock pulses defines the frequency at which the clock signal can trigger other circuits.

“switch” refers to any device providing controllable changes in impedance between an open state of very high or effectively infinite impedance, and a closed state of very low or effectively zero impedance. Examples of switches are NMOS transistors and PMOS transistors, and mechanical switches. … more “switch” refers to any device providing controllable changes in impedance between an open state of very high or effectively infinite impedance, and a closed state of very low or effectively zero impedance. Examples of switches are NMOS transistors and PMOS transistors, and mechanical switches.

“Random-access commands” refers to Memory commands targeting non-sequential addresses in a memory. Random-access commands are distinguished from serial or block commands, which target multiple contiguous addresses in memory. … more “Random-access commands” refers to Memory commands targeting non-sequential addresses in a memory. Random-access commands are distinguished from serial or block commands, which target multiple contiguous addresses in memory.

“Memory array” refers to a collection of memory cells, organized into an array of rows and columns. Memory arrays may be two or three dimensional … more “Memory array” refers to a collection of memory cells, organized into an array of rows and columns. Memory arrays may be two or three dimensional

“Memory system” refers to a memory device including a controller operable on at least one memory array. Memory systems typically include many other components as well, as known in the art. … more “Memory system” refers to a memory device including a controller operable on at least one memory array. Memory systems typically include many other components as well, as known in the art.

“Memory channel” refers to a communication path for data to and from a memory. Memory channels are typically operable in parallel with one another, increasing throughput of data to and from the memory. For example in a multi-die memory package comprising four NAND memory dies, in which each NAND die comprises two memory channels, there may be eight FLASH interface modules. … more “Memory channel” refers to a communication path for data to and from a memory. Memory channels are typically operable in parallel with one another, increasing throughput of data to and from the memory. For example in a multi-die memory package comprising four NAND memory dies, in which each NAND die comprises two memory channels, there may be eight FLASH interface modules.

“Flash translation layer” refers to a logic component in a memory device involved in the writing of data, typically involved in operations such as logical address translation, memory page management, memory wear leveling, and memory garbage collection. Modern flash translation layers may be configured to perform these operations while minimizing write amplification, which is the ratio of the amount of data actually written when executing a write command, to the amount of data in the write command as issued to the memory device. In some implementations, some or all of the flash translation layer logic may be implemented on the host device. … more “Flash translation layer” refers to a logic component in a memory device involved in the writing of data, typically involved in operations such as logical address translation, memory page management, memory wear leveling, and memory garbage collection. Modern flash translation layers may be configured to perform these operations while minimizing write amplification, which is the ratio of the amount of data actually written when executing a write command, to the amount of data in the write command as issued to the memory device. In some implementations, some or all of the flash translation layer logic may be implemented on the host device.

"Phase-locked-loop" is logic that generates an output signal whose phase is related to the phase of an input signal. One example of a phase-locked-loop is an electronic circuit comprising a variable frequency oscillator and a phase detector in a feedback loop. The oscillator generates a periodic signal, and the phase detector compares the phase of that signal with the phase of the input periodic signal, adjusting the oscillator to keep the phases matched. … more "Phase-locked-loop" is logic that generates an output signal whose phase is related to the phase of an input signal. One example of a phase-locked-loop is an electronic circuit comprising a variable frequency oscillator and a phase detector in a feedback loop. The oscillator generates a periodic signal, and the phase detector compares the phase of that signal with the phase of the input periodic signal, adjusting the oscillator to keep the phases matched.

“Clock period” is the time between an edge (e.g., either rising or falling) of a first clock pulse and the corresponding edge of the next clock pulse in sequence. The clock toggle rate is the time between the rising and falling edges of one clock pulse. … more “Clock period” is the time between an edge (e.g., either rising or falling) of a first clock pulse and the corresponding edge of the next clock pulse in sequence. The clock toggle rate is the time between the rising and falling edges of one clock pulse.

“Workload” refers to the commands received by device and queued for execution, which may include commands currently undergoing execution. The workload can include not only a number of commands received and queued for execution, or expected to be received (e.g., based on hints provided by the host device), but also the types of commands and/or associated performance requirements of the commands. … more “Workload” refers to the commands received by device and queued for execution, which may include commands currently undergoing execution. The workload can include not only a number of commands received and queued for execution, or expected to be received (e.g., based on hints provided by the host device), but also the types of commands and/or associated performance requirements of the commands.

A “host device” is a device such as a computer system that issues memory commands to a service device, such as a memory device. … more A “host device” is a device such as a computer system that issues memory commands to a service device, such as a memory device.

A “performance requirement” refers to a timing requirement, for example a completion time or latency limit imposed on a memory command or commands. The performance requirement may take the form of a latency requirement of the command or commands, or a throughput requirement (X commands must complete in Y amount of time), for example. A performance requirement may be inherent in a command based on design specifications, or explicitly configured by a host device providing the command. … more A “performance requirement” refers to a timing requirement, for example a completion time or latency limit imposed on a memory command or commands. The performance requirement may take the form of a latency requirement of the command or commands, or a throughput requirement (X commands must complete in Y amount of time), for example. A performance requirement may be inherent in a command based on design specifications, or explicitly configured by a host device providing the command.

“Resistor” refers to any circuit element providing an impedance. Resistors include pure resistive elements and elements including some design-purpose inductance and capacitance. Resistors may be passive or active devices. … more “Resistor” refers to any circuit element providing an impedance. Resistors include pure resistive elements and elements including some design-purpose inductance and capacitance. Resistors may be passive or active devices.

“ODT resistors” refers to resistors electrically coupled to a transmission line to configure the impedance experienced by signals transmitted on the transmission line. One or more ODT resistors may be configured in parallel on the transmission lines. … more “ODT resistors” refers to resistors electrically coupled to a transmission line to configure the impedance experienced by signals transmitted on the transmission line. One or more ODT resistors may be configured in parallel on the transmission lines.

“solid state drive” refers to a memory device providing a large memory capacity utilizing non-volatile semi-conductor gates, such as NAND or NOR gate devices, where a memory device refers to any device providing data storage for another device. Examples of memory devices include solid state drives, hard disk drives, optical drives, and devices providing volatile memory storage such as dynamic random access memory (DRAM). Other examples of memory devices include memory cards, and Universal Serial Bus (USB) FLASH drives. Solid state drives may provide memory capacity on par with hard disk devices but with much higher performance. NAND flash memories in particular tend to have a lower price and a larger capacity relative to other non-volatile memory types (memory that retains its state in the absence of operating power). … more “solid state drive” refers to a memory device providing a large memory capacity utilizing non-volatile semi-conductor gates, such as NAND or NOR gate devices, where a memory device refers to any device providing data storage for another device. Examples of memory devices include solid state drives, hard disk drives, optical drives, and devices providing volatile memory storage such as dynamic random access memory (DRAM). Other examples of memory devices include memory cards, and Universal Serial Bus (USB) FLASH drives. Solid state drives may provide memory capacity on par with hard disk devices but with much higher performance. NAND flash memories in particular tend to have a lower price and a larger capacity relative to other non-volatile memory types (memory that retains its state in the absence of operating power).

“Insulation layer” refers to a planar layer of material configured to provide electrical insulation between electrical components on either side of the insulation layer. In one embodiment, the insulation layer is made of a dielectric material, such as a plastic, epoxy, silicon, fiberglass, or the like. In certain embodiments, substrate layers serve to provide electrical insulation. Consequently, an insulation layer may be used interchangeably herein with a substrate or substrate layer. … more “Insulation layer” refers to a planar layer of material configured to provide electrical insulation between electrical components on either side of the insulation layer. In one embodiment, the insulation layer is made of a dielectric material, such as a plastic, epoxy, silicon, fiberglass, or the like. In certain embodiments, substrate layers serve to provide electrical insulation. Consequently, an insulation layer may be used interchangeably herein with a substrate or substrate layer.

“Substrate” refers to a material which provides a surface on which something is deposited or inscribed, for example a silicon wafer used to manufacture integrated circuits and or semiconductors. (Search “substrate” on lexico.com © 2020 Lexico.com. Edited. Accessed Apr. 3, 2020.) A substrate may be a rigid or flexible structure and may be planar in shape. A substrate may also be used in a printed circuit board (PCB). Typically, a substrate is non-conductive or semi-conductive and may be formed from a variety of materials including silicon, plastic, resin, fiberglass, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide (GaAs), an alloy of silicon and germanium, indium phosphide (InP), or the like. In certain embodiments, a substrate may comprise a silicon wafer and in other embodiments, a substrate may comprise another layer of an integrated semiconductor, including, but not limited to, a top surface of a cell film stack, or the like. … more “Substrate” refers to a material which provides a surface on which something is deposited or inscribed, for example a silicon wafer used to manufacture integrated circuits and or semiconductors. (Search “substrate” on lexico.com © 2020 Lexico.com. Edited. Accessed Apr. 3, 2020.) A substrate may be a rigid or flexible structure and may be planar in shape. A substrate may also be used in a printed circuit board (PCB). Typically, a substrate is non-conductive or semi-conductive and may be formed from a variety of materials including silicon, plastic, resin, fiberglass, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide (GaAs), an alloy of silicon and germanium, indium phosphide (InP), or the like. In certain embodiments, a substrate may comprise a silicon wafer and in other embodiments, a substrate may comprise another layer of an integrated semiconductor, including, but not limited to, a top surface of a cell film stack, or the like.

“Ground via” refers to a via configured to electrically connect a ground source (also referred to simply as ‘ground’) or a structure conducting an electrical signal to a ground source. … more “Ground via” refers to a via configured to electrically connect a ground source (also referred to simply as ‘ground’) or a structure conducting an electrical signal to a ground source.

“Source via” refers to a via configured to electrically connect a signal source or a structure conducting a signal source to a signal trace. … more “Source via” refers to a via configured to electrically connect a signal source or a structure conducting a signal source to a signal trace.

“Via” refers to a conductive structure configured to electrically connect a conductor on one level of a multilayer metal stack to another conductor on another level of the multilayer metal stack. Vias may be made of a variety of conductive materials. Often vias are made from tungsten and may be referred to as ‘plugs’ or ‘contact plugs.’ … more “Via” refers to a conductive structure configured to electrically connect a conductor on one level of a multilayer metal stack to another conductor on another level of the multilayer metal stack. Vias may be made of a variety of conductive materials. Often vias are made from tungsten and may be referred to as ‘plugs’ or ‘contact plugs.’