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US-20150012794-A1 determining whether a first error correcting code (ECC) code word of a non-volatile storage device is correctable using a first error correcting code; 161 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 determining whether a second ECC code word is correctable using a second error correcting code in response to determining that the first ECC code word is uncorrectable using the first error correcting code; and 162 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 adjusting one or more media parameters for accessing a non-volatile medium of the non-volatile storage device based on error information, in response to determining that the second ECC code word is correctable using the second error correcting code, the error information comprising information from a decoder for the second error correcting code. 163 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 Claim 2.The method of claim 1, further comprising 164 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 determining whether the second ECC code word is correctable using a repetition error correcting code; and 165 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 deriving analog information from repeated messages of the repetition error correcting code in response to determining that the second ECC code word is uncorrectable using the repetition error correcting code, wherein determining that the second ECC code word is correctable using the second error correcting code comprises using the analog information to inform the decoder for the second error correcting code. 166 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 Claim 3.The method of claim 1, wherein the second error correcting code comprises a repetition error correcting code. 167 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 FIG. 8 depicts yet another embodiment of a method 800 for managing non-volatile media. The method 800 begins, and the control loop module 410 reads 802 an ECC chunk. The primary ECC module 302 determines 804 first error information by attempting to decode the ECC chunk using the first error correcting code. The repetition code module 406 determines 806 third error information by attempting to decode the ECC chunk using a repetition error correcting code. The analog information module 408 derives 808 analog information from repeated messages of the repetition error correcting code. The secondary ECC module 304 determines 810 second error information by attempting to decode the ECC chunk using the analog information with a second error correcting code different from the first error correcting code. The adjustment module 306 adjusts 812 media parameters based on error information, which includes the first error information, the second error information and the third error information. The control loop module 410 determines 814 if an error criterion is satisfied. If the error criterion is satisfied, then the non-volatile memory device 120 reads and returns 816 data from additional ECC chunks, and the method 800 ends. If the error criterion is not satisfied, then the method 800 enters a new iteration, and the control loop module 410 reads 802 the ECC chunk using the adjusted media parameters. 159 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 Claim 5.The method of claim 1, wherein the second error correcting code comprises a balanced code and the error information comprises information indicating a balance of the second ECC code word. 169 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 Claim 6.The method of claim 1, further comprising iteratively reading the second ECC code word from the non-volatile storage device using the adjusted media parameters, determining the error information, and adjusting one or more media parameters, until the first ECC code word is correctable using the first error correcting code. 170 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 Claim 7.The method of claim 1, wherein the one or more media parameters comprise one or more read voltage thresholds. 171 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 Claim 8.The method of claim 1, wherein data of the second ECC code word comprises a header for one or more additional ECC code words of the non-volatile storage device. 172 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 Claim 9.The method of claim 1, wherein the second ECC code word is nested within the first ECC code word such that the first and second ECC code words provide error protection for the same data. 173 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 Claim 10.The method of claim 1, wherein the first ECC code word and the second ECC code word provide error protection for different data. 174 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 Claim 11.An apparatus comprising: 175 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 In some embodiments, using a balanced code as the secondary/inner error correcting code results in a balanced ECC chunk. In certain embodiments, however, the DC balance module 404 may determine that a read ECC chunk encoded has become unbalanced, or does not exhibit an expected ratio of binary ones and binary zeroes, due to errors or the like. In one embodiment, the adjustment module 306 may adjust one or more media parameters based on error information from the DC balance module 404, to restore the balance of the at least one ECC chunk. 131 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 In one embodiment, the adjustment module 306 adjusts a read voltage threshold for the storage cells of the non-volatile memory media 122 based on the direction of deviation that the DC balance module 404 determines. The adjustment module 306, in one embodiment, may adjust the read voltage threshold in the direction of deviation, away from the direction of deviation, or the like. For example, in one embodiment, the adjustment module 306 may raise the read voltage threshold from a previous read voltage threshold in response to the DC balance module 404 detecting more binary ones than expected in the known balance/bias and lower the read voltage threshold in response to fewer binary ones than expected. While the relative directions may change based on characteristics of the storage cells of the non-volatile memory media 122 and the storage scheme employed, the adjustment module 306 adjusts the read voltage threshold to correct or compensate for the difference determined by the DC balance module 404. 140 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 In certain embodiments, having an indication as to which direction to adjust a read voltage threshold or other media parameter may provide a reduction in time and resources needed to identify a new adjusted read voltage level or other media parameter. If the direction in which to make a read voltage threshold was unknown, identifying a new read voltage threshold may require a labor and time intensive process of trial and error as different possible read voltage thresholds are set and then tested and then adjusted as needed. The process may be used to find a read voltage threshold that results in a re-read of the data packet substantially matching the known balance/bias. 139 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 Because, in certain embodiments, the expected balance/bias is known, comparing a read balance/bias relative to the known balance/bias indicates that certain bits which should have satisfied the known balance/bias presently do not, which may be due to a data error or due to changes in the voltage level stored in the storage cells after they were written. In addition, determining that the difference is positive or negative indicates whether the read voltage should be increased or decreased such that a re-read of the data set will result in a read balance/bias that is the same as, or comes closer to the known balance/bias. In one embodiment, the adjustment module 306 adjusts the read voltage level (or another media parameter) in the same direction as the direction of deviation indicated by the DC balance module 404. 138 Added by DJM 2 2021 2/22/21, 12:00 AM
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US-20150012794-A1 In another example, if the read balance/bias of a data set is 0.3, meaning that thirty percent of the data bits are binary ones, the DC balance module 404, in one embodiment, may subtract an expected bias of 0.5 or the like from the read bias of the data set, 0.3, for a difference of −0.2. In this example, the direction is the opposite of the first example, “−0.2,” “negative,” “less then,” “down,” or the like. 137 Added by DJM 2 2021 2/22/21, 12:00 AM

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