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In one embodiment, the adjustment module 306 adjusts a read voltage threshold for the storage cells of the non-volatile memory media 122 based on the direction of deviation that the DC balance module 404 determines. The adjustment module 306, in one embodiment, may adjust the read voltage threshold in the direction of deviation, away from the direction of deviation, or the like. For example, in one embodiment, the adjustment module 306 may raise the read voltage threshold from a previous read voltage threshold in response to the DC balance module 404 detecting more binary ones than expected in the known balance/bias and lower the read voltage threshold in response to fewer binary ones than expected. While the relative directions may change based on characteristics of the storage cells of the non-volatile memory media 122 and the storage scheme employed, the adjustment module 306 adjusts the read voltage threshold to correct or compensate for the difference determined by the DC balance module 404.

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<w:p><w:pPr><w:pStyle w:val="TPSBody100"/></w:pPr><w:r><w:t xml:space="preserve">In one embodiment, the adjustment module </w:t></w:r><w:r><w:t>306</w:t></w:r><w:r><w:t xml:space="preserve"> adjusts a read voltage threshold for the storage cells of the non-volatile memory media </w:t></w:r><w:r><w:t>122</w:t></w:r><w:r><w:t xml:space="preserve"> based on the direction of deviation that the DC balance module </w:t></w:r><w:r><w:t>404</w:t></w:r><w:r><w:t xml:space="preserve"> determines. The adjustment module </w:t></w:r><w:r><w:t>306</w:t></w:r><w:r><w:t xml:space="preserve">, in one embodiment, may adjust the read voltage threshold in the direction of deviation, away from the direction of deviation, or the like. For example, in one embodiment, the adjustment module </w:t></w:r><w:r><w:t>306</w:t></w:r><w:r><w:t xml:space="preserve"> may raise the read voltage threshold from a previous read voltage threshold in response to the DC balance module </w:t></w:r><w:r><w:t>404</w:t></w:r><w:r><w:t xml:space="preserve"> detecting more binary ones than expected in the known balance/bias and lower the read voltage threshold in response to fewer binary ones than expected. While the relative directions may change based on characteristics of the storage cells of the non-volatile memory media </w:t></w:r><w:r><w:t>122</w:t></w:r><w:r><w:t xml:space="preserve"> and the storage scheme employed, the adjustment module </w:t></w:r><w:r><w:t>306</w:t></w:r><w:r><w:t xml:space="preserve"> adjusts the read voltage threshold to correct or compensate for the difference determined by the DC balance module </w:t></w:r><w:r><w:t>404</w:t></w:r><w:r><w:t>.</w:t></w:r></w:p>