"Word line voltage" refers to a voltage applied to a word line. In one embodiment, a word line voltage comprises a voltage level used to program memory cells of a non-volatile memory array and is represented by the symbol VPGM. … more "Word line voltage" refers to a voltage applied to a word line. In one embodiment, a word line voltage comprises a voltage level used to program memory cells of a non-volatile memory array and is represented by the symbol VPGM.

"Digital output code" refers to a binary code made up of one or more binary bits, each bit configured to have a set value ("1") or an unset/reset value ("0"). … more "Digital output code" refers to a binary code made up of one or more binary bits, each bit configured to have a set value ("1") or an unset/reset value ("0").

"Input clock" refers to any hardware, software, firmware, circuit, circuitry, electronic component, module, logic, device, or apparatus configured, programmed, designed, arranged, or engineered to supply a clock signal as input to a circuit and/or electronic component. … more "Input clock" refers to any hardware, software, firmware, circuit, circuitry, electronic component, module, logic, device, or apparatus configured, programmed, designed, arranged, or engineered to supply a clock signal as input to a circuit and/or electronic component.

"Leakage current threshold" refers to a threshold that represents a total amount of leakage current one or more word lines can have and maintain a usable condition.In one embodiment, the leakage current threshold is configured to account for other current in a circuit path for a leakage detection circuit. For example, the leakage current threshold may be configured to account for current in the circuit path such as junction leakage current, common mode current, and the like. … more "Leakage current threshold" refers to a threshold that represents a total amount of leakage current one or more word lines can have and maintain a usable condition.In one embodiment, the leakage current threshold is configured to account for other current in a circuit path for a leakage detection circuit. For example, the leakage current threshold may be configured to account for current in the circuit path such as junction leakage current, common mode current, and the like.

"Odd selected word lines" refers to word lines designated for use in a particular storage operation or memory operation, and having an “odd” designator, in contrast with word lines having “even” designators. This designation may be based on a counted number associated with the word line, beginning with “WL0” to designate the word line physically closest to the substrate, with “0” being considered an even designation, and “WL1” being the word line physically above WL0 and farther from the substrate, with “1” being considered an odd designation, etc. Certain storage operations such as programming, reading, or sensing, may be performed on memory cells of a selected word line through a series of one or more steps. Other storage operations such as erasing memory cells, in one embodiment, may be performed on memory cells of a plurality of word lines simultaneously through a series of one or more steps. In such embodiments, the erase operation may be performed on multiple selected word lines. … more "Odd selected word lines" refers to word lines designated for use in a particular storage operation or memory operation, and having an “odd” designator, in contrast with word lines having “even” designators. This designation may be based on a counted number associated with the word line, beginning with “WL0” to designate the word line physically closest to the substrate, with “0” being considered an even designation, and “WL1” being the word line physically above WL0 and farther from the substrate, with “1” being considered an odd designation, etc. Certain storage operations such as programming, reading, or sensing, may be performed on memory cells of a selected word line through a series of one or more steps. Other storage operations such as erasing memory cells, in one embodiment, may be performed on memory cells of a plurality of word lines simultaneously through a series of one or more steps. In such embodiments, the erase operation may be performed on multiple selected word lines.

"Successive approximation logic circuit" refers to a circuit, sub-circuit, circuitry, electronic component, hardware, software, firmware, module, logic, device, or apparatus configured, programmed, designed, arranged, or engineered to implement successive approximation. … more "Successive approximation logic circuit" refers to a circuit, sub-circuit, circuitry, electronic component, hardware, software, firmware, module, logic, device, or apparatus configured, programmed, designed, arranged, or engineered to implement successive approximation.

"Memory current" refers to an electrical current flowing through memory cells of a non-volatile memory array. … more "Memory current" refers to an electrical current flowing through memory cells of a non-volatile memory array.

"Plane" refers to a division of the memory array that permits certain storage operations to be performed on both planes using certain physical row addresses and certain physical column addresses. … more "Plane" refers to a division of the memory array that permits certain storage operations to be performed on both planes using certain physical row addresses and certain physical column addresses.

"Reference voltage" refers to a voltage configured to serve as a reference when conducting one or more tests of an electronic circuit. In one embodiment, a reference voltage may be used to provide voltage to test circuitry such as a leakage detection circuit. In certain embodiments, a reference voltage may be configured to have a magnitude designed for a test performed using the test circuitry. In another embodiment, an existing voltage for an electronic device may be re-purposed for use in providing voltage to test circuitry such as a leakage detection circuit. For example, in one embodiment, the leakage detection circuit may be couplable to word lines of a non-volatile memory array and the reference voltage may comprise a programming voltage, identified as VPGM. … more "Reference voltage" refers to a voltage configured to serve as a reference when conducting one or more tests of an electronic circuit. In one embodiment, a reference voltage may be used to provide voltage to test circuitry such as a leakage detection circuit. In certain embodiments, a reference voltage may be configured to have a magnitude designed for a test performed using the test circuitry. In another embodiment, an existing voltage for an electronic device may be re-purposed for use in providing voltage to test circuitry such as a leakage detection circuit. For example, in one embodiment, the leakage detection circuit may be couplable to word lines of a non-volatile memory array and the reference voltage may comprise a programming voltage, identified as VPGM.

"Driver circuit" refers to a circuit, sub-circuit, circuitry, electronic component, hardware, software, firmware, module, logic, device, or apparatus configured, programmed, designed, arranged, or engineered to supply a voltage, either in analog or digital wave form, to another circuit, sub-circuit, electronic component, logic, device, or apparatus. … more "Driver circuit" refers to a circuit, sub-circuit, circuitry, electronic component, hardware, software, firmware, module, logic, device, or apparatus configured, programmed, designed, arranged, or engineered to supply a voltage, either in analog or digital wave form, to another circuit, sub-circuit, electronic component, logic, device, or apparatus.

"Leakage current" refers to electrical current that escapes from a control line due to a defect, short, or other anomaly between the control line and another conducting structure. … more "Leakage current" refers to electrical current that escapes from a control line due to a defect, short, or other anomaly between the control line and another conducting structure.

"Leakage detection circuit" refers to a circuit, sub-circuit, circuitry, electronic component, hardware, software, firmware, module, logic, device, or apparatus configured, programmed, designed, arranged, or engineered to sense/detect/determine current leakage current within, or from, one or more target control lines that are tested or checked for leakage current. In one embodiment, the target control lines may comprise one or more of word lines, bit lines, NAND strings, memory cells, and the like. … more "Leakage detection circuit" refers to a circuit, sub-circuit, circuitry, electronic component, hardware, software, firmware, module, logic, device, or apparatus configured, programmed, designed, arranged, or engineered to sense/detect/determine current leakage current within, or from, one or more target control lines that are tested or checked for leakage current. In one embodiment, the target control lines may comprise one or more of word lines, bit lines, NAND strings, memory cells, and the like.

"Process, Voltage, Temperature variations" or "PVT" refers to process variations, voltage level differences, and temperature differences between two fabricated semiconductor devices. … more "Process, Voltage, Temperature variations" or "PVT" refers to process variations, voltage level differences, and temperature differences between two fabricated semiconductor devices.

"Current mirror circuit" refers to a circuit, sub-circuit, circuitry, electronic component, hardware, software, firmware, module, logic, device, or apparatus configured, programmed, designed, arranged, or engineered to mirror/copy a current through one active device by controlling the current in another active device of a circuit, keeping the output current constant regardless of loading. (search "current mirror" on Wikipedia.com March 6, 2020. Modified. Accessed May 1, 2020.) … more "Current mirror circuit" refers to a circuit, sub-circuit, circuitry, electronic component, hardware, software, firmware, module, logic, device, or apparatus configured, programmed, designed, arranged, or engineered to mirror/copy a current through one active device by controlling the current in another active device of a circuit, keeping the output current constant regardless of loading. (search "current mirror" on Wikipedia.com March 6, 2020. Modified. Accessed May 1, 2020.)

"Even selected word lines" refers to word lines designated for use in a particular storage operation or memory operation, and having an “even” designator, in contrast with word lines having “odd” designators. This designation may be based on a counted number associated with the word line, beginning with “WL0” to designate the word line physically closest to the substrate, with “0” being considered an even designation, and “WL1” being the word line physically above WL0 and farther from the substrate, with “1” being considered an odd designation, etc. Certain storage operations such as programming, reading, or sensing, may be performed on memory cells of a selected word line through a series of one or more steps. Other storage operations such as erasing memory cells, in one embodiment, may be performed on memory cells of a plurality of word lines simultaneously through a series of one or more steps. In such embodiments, the erase operation may be performed on multiple selected word lines. … more "Even selected word lines" refers to word lines designated for use in a particular storage operation or memory operation, and having an “even” designator, in contrast with word lines having “odd” designators. This designation may be based on a counted number associated with the word line, beginning with “WL0” to designate the word line physically closest to the substrate, with “0” being considered an even designation, and “WL1” being the word line physically above WL0 and farther from the substrate, with “1” being considered an odd designation, etc. Certain storage operations such as programming, reading, or sensing, may be performed on memory cells of a selected word line through a series of one or more steps. Other storage operations such as erasing memory cells, in one embodiment, may be performed on memory cells of a plurality of word lines simultaneously through a series of one or more steps. In such embodiments, the erase operation may be performed on multiple selected word lines.

"Resistor" refers to a passive two-terminal electrical component that implements electrical resistance as a circuit element. (search "resistor" on Wikipedia.com March 23, 2020. Accessed May 1, 2020.) … more "Resistor" refers to a passive two-terminal electrical component that implements electrical resistance as a circuit element. (search "resistor" on Wikipedia.com March 23, 2020. Accessed May 1, 2020.)

"Leakage code" refers to a digital output code configured and/or encoded to represent a magnitude of current leakage on an electrical line or control line. … more "Leakage code" refers to a digital output code configured and/or encoded to represent a magnitude of current leakage on an electrical line or control line.

"Media characteristic" refers to an attribute or statistic for a set of particular storage cells, such as a program/erase cycle count for the set of storage cells, a read count for the set of storage cells, a retention time since a previous write for the set of storage cells (aka a data retention time), a dwell time for the set of storage cells such as a logical or physical erase block (e.g., a time between a program of an erase block and an erase of the erase block), an average of multiple previous dwell times for the set of storage cells, an error statistic for the set of storage cells, or the like.A media characteristic for a set of storage cells may be static or may be dynamic and change over time. A media characteristic, in one embodiment, is a statistic, heuristic, mathematical model, transform, or other descriptor associated with an attribute of the non-volatile memory media.A media characteristic, in one embodiment, includes or relates to a make, a model, a manufacturer, a product version, or the like for the storage device and/or for the non-volatile memory media. A media characteristic, in a further embodiment, may include or relate to an environmental condition or a use of the storage device and/or of the non-volatile memory media, such as a temperature, a use case (e.g., a cache use case, an archival use case, a server use case, an enterprise use case, a consumer use case, etc.), or the like. … more "Media characteristic" refers to an attribute or statistic for a set of particular storage cells, such as a program/erase cycle count for the set of storage cells, a read count for the set of storage cells, a retention time since a previous write for the set of storage cells (aka a data retention time), a dwell time for the set of storage cells such as a logical or physical erase block (e.g., a time between a program of an erase block and an erase of the erase block), an average of multiple previous dwell times for the set of storage cells, an error statistic for the set of storage cells, or the like.A media characteristic for a set of storage cells may be static or may be dynamic and change over time. A media characteristic, in one embodiment, is a statistic, heuristic, mathematical model, transform, or other descriptor associated with an attribute of the non-volatile memory media.A media characteristic, in one embodiment, includes or relates to a make, a model, a manufacturer, a product version, or the like for the storage device and/or for the non-volatile memory media. A media characteristic, in a further embodiment, may include or relate to an environmental condition or a use of the storage device and/or of the non-volatile memory media, such as a temperature, a use case (e.g., a cache use case, an archival use case, a server use case, an enterprise use case, a consumer use case, etc.), or the like.

"Most significant bit" or "MSB" refers to is the bit position in a binary number having the greatest value. The MSB is sometimes referred to as the high-order bit or left-most bit due to the convention in positional notation of writing more significant digits further to the left. (Search “Bit numbering”, Wikipedia, Jan. 29, 2019; Accessed May 7, 2020.) … more "Most significant bit" or "MSB" refers to is the bit position in a binary number having the greatest value. The MSB is sometimes referred to as the high-order bit or left-most bit due to the convention in positional notation of writing more significant digits further to the left. (Search “Bit numbering”, Wikipedia, Jan. 29, 2019; Accessed May 7, 2020.)

"Selected word lines" refers to a word line designated for use in a particular storage operation or memory operation. Certain storage operations such as programming, reading, or sensing, may be performed on memory cells of a selected word line through a series of one or more steps. Other storage operations such as erasing memory cells, in one embodiment, may be performed on memory cells of a plurality of word lines simultaneously through a series of one or more steps. In such embodiments, the erase operation may be performed on multiple selected word lines. … more "Selected word lines" refers to a word line designated for use in a particular storage operation or memory operation. Certain storage operations such as programming, reading, or sensing, may be performed on memory cells of a selected word line through a series of one or more steps. Other storage operations such as erasing memory cells, in one embodiment, may be performed on memory cells of a plurality of word lines simultaneously through a series of one or more steps. In such embodiments, the erase operation may be performed on multiple selected word lines.