Dave's PCF WIP: Paragraphs

Paragraphs

Actions	Application	Content	Paragraph Number	Notes	Modified
		Content		Paragraph Number	Notes	Any Field
View Edit Delete	US-8380915-A1	Claim 13.The method of claim 9, further comprising determining a plurality of additional configuration parameters for a plurality of different sets of storage cells of the solid-state storage media based on storage media characteristics for the plurality of different sets of storage cells and configuring the plurality of different sets of storage cells to use the plurality of additional configuration parameters.	331	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	Claim 14.The method of claim 9, wherein the configuration parameter comprises a parameter of the set of storage cells modifiable by way of an interface, the configuration parameter selected from the group comprising a read voltage, a step magnitude for an incremental step pulse programming operation, a maximum number of iterations for an incremental step pulse programming operation, a program verify threshold for a program operation, an initial bias for an incremental step pulse programming operation, a step magnitude for an incremental step pulse erase operation, a maximum number of iterations for an incremental step pulse erase operation, an erase verify threshold for an erase operation, and an initial bias for an incremental step pulse erase operation.	332	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	Claim 15.The method of claim 9, wherein configuring the set of storage cells to use the determined configuration parameter further comprises configuring the set of storage cells to use the determined configuration parameter in response to a trigger.	333	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	Claim 16.The method of claim 15, wherein the trigger comprises one of, a change in the one or more storage media characteristics, a read request for the set of storage cells, a startup operation for a device comprising the set of storage cells, and a regular shutdown operation for a device comprising the set of storage cells.	334	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	Claim 17.The method of claim 9, wherein the one or more storage media characteristics comprise one or more of a program/erase cycle count for the set of storage cells, a read count for the set of storage cells, a retention time since a previous write for the set of storage cells, a temperature for the set of storage cells, a use case for the set of storage cells, and an error statistic for the set of storage cells.	335	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	Claim 18.The method of claim 9, wherein the determined configuration parameter is based on a target set of storage cells, the target set of storage cells having controlled use characteristics.	336	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	Claim 19.The method of claim 18, wherein the determined configuration parameter for the set of storage cells is based on one of a determined configuration parameter for the target set of storage cells and one or more storage media characteristics for the target set of storage cells.	337	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	Claim 20.The method of claim 18, wherein determining the configuration parameter for the set of storage cells comprises,	338	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	comparing the at least one of the one or more storage media characteristics for the set of storage cells to at least one storage media characteristic for the target set of storage cells; and	339	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	determining the configuration parameter for the set of storage cells based on a difference between the at least one storage media characteristic for the set of storage cells and the at least one storage media characteristic for the target set of storage cells.	340	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	An apparatus, system, and method are disclosed to manage solid-state storage media by determining one or more configuration parameters for the solid-state storage media. A media characteristic module references one or more storage media characteristics for a set of storage cells of solid-state storage media. A configuration parameter module determines a configuration parameter for the set of storage cells based on the one or more storage media characteristics. A storage cell configuration module configures the set of storage cells to use the determined configuration parameter.	341	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	In one embodiment, the adjustment module 408 adjusts a read voltage threshold for the storage cells of the solid-state storage media 110 based on the direction of deviation that the direction module 406 determines. The adjustment module 408, in one embodiment, may adjust the read voltage threshold in the direction of deviation, away from the direction of deviation, or the like. For example, in one embodiment, the adjustment module 408 may raise the read voltage threshold from a previous read voltage threshold in response to the direction module 406 detecting more binary ones than expected in the known bias and lower the read voltage threshold in response to fewer binary ones than expected. While the relative directions may change based on characteristics of the storage cells of the solid-state storage media 110 and the storage scheme employed, the adjustment module 408 adjusts the read voltage threshold to correct or compensate for the difference determined by the direction module 406.	211	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	In a further embodiment, the adjustment module 408 determines an amount to adjust the read voltage threshold based on an amplitude of the direction or amplitude of the difference determined by the direction module 406. In another embodiment, the adjustment module 408 may scale or otherwise adjust the amplitude from the direction module 406 and adjust the read voltage threshold the adjusted amount. For example, the adjustment module 408, in one embodiment, may adjust the read voltage threshold by several adjustment levels in a single adjustment, based on the amplitude of the direction. In a further embodiment, the adjustment module 408 may select an amount to adjust the read voltage threshold based on additional factors such as age, amount of wear, usage history, error history, or other aspects of the solid-state storage media 110. As described above with regard to FIG. 3B, in certain embodiments, the adjustment module 408 may make a read voltage threshold adjustment based on one or more statistics for the solid-state storage device 102 that the configuration module 352 receives from the device factor module 354.	212	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	In one embodiment, the distribution module 414 determines that the read bias of the data set is within an expected distribution of the known bias, and that no additional adjustments of the read voltage threshold should be made. In a further embodiment, the data set read module 402, the deviation module 404, the direction module 406, and the adjustment module 408 continue to re-read the data set with a new read voltage threshold, re-determine that the read bias for the data set deviates from the known bias, re-determine the direction of deviation for the data set, and readjust the read voltage threshold until the distribution module 414 determines that the read bias of the data set is within the expected distribution.	226	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	In one embodiment, the adjustment module 408 stops readjusting a read voltage threshold once a retry threshold is satisfied. For example, if the ECC decoder 322 cannot correct a data error and/or if the read bias for the data set continues to deviate from the known bias when a retry threshold for the data set is satisfied, the adjustment module 408 may cease making adjustments to the read voltage threshold. The retry threshold may be selected based on a set of possible read voltage threshold levels, or the like. In one embodiment, a retry threshold sets a number of times which the adjustment module 408 may adjust a read voltage threshold. In another embodiment, a retry threshold may set an amount of time in which the adjustment module 408 may make read voltage threshold adjustments. The solid-state storage controller 104, in certain embodiments, may take further remedial action in response to the retry threshold being satisfied, such as retiring the storage cells associated with the data set, logically replacing the storage cells associated with the data set, or the like.	214	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	In one embodiment, the adjustment module 408 does not adjust a read voltage threshold, even if the deviation module 404 determines that the read bias of a data set deviates from the known bias, a data error has occurred, a retry threshold has not been met, or the like. The adjustment module 408, in certain embodiments, may selectively adjust a read voltage threshold based on one or more risk factors associated with an adjustment to a grouping of storage cells. For example, risk factors may include an error rate for the grouping of storage cells (such as an UBER or the like), an erase cycle count for the grouping of storage cells, a storage request latency for the grouping of storage cells (such as an average, maximum, or other storage request execution latency), an age of the grouping of storage cells, a number of previous adjustments to a read voltage threshold of the grouping of storage cells, and/or other potential risk factors. In one embodiment, the adjustment module 408 may cancel or delay an adjustment to a read voltage threshold in response to one or more risk factors satisfying a risk threshold. In a further embodiment, the solid-state storage controller 104 may take further remedial action in response to one or more risk factors satisfying a risk threshold.	215	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	In another embodiment, the adjustment module 408 uses a search algorithm to determine the read voltage threshold based on the direction of deviation. For example, the range of voltages in the direction of deviation from the current read voltage threshold may be the search space for the search algorithm. The adjustment module 408, in one embodiment, may use a linear search, a binary search, or the like to determine the read voltage threshold. To check each step as part of the search algorithm, the data set read module 402 may re-read the data set in response to each adjustment, and the deviation module 404 may re-determine whether the read bias of the re-read data set deviates from the known bias. The direction module 406 may re-determine a direction of deviation for the re-read data set to further the search. The adjustment module 408 may iteratively readjust the read voltage threshold based on the re-determined direction of deviation until the deviation module 404 determines that the read bias of a re-read data set does not deviate from the known bias, or until each of the read voltage threshold level has been tested, and/or until the data set can be corrected using ECC checkbits, or the like.	213	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	Advantageously, having an indication as to which direction to adjust the read voltage threshold provides a significant reduction in time and resources needed to identify a new adjusted read voltage level. If the direction in which to make a read voltage threshold was unknown, identifying a new read voltage threshold may require a labor and time intensive process of trial and error as different possible read voltage thresholds are set and then tested and then adjusted as needed. The process may be needed to find a read voltage threshold that results in a re-read of the data packet substantially matching the known bias.	210	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	Because the expected bias is known, comparing a read bias relative the known bias indicates that certain bits which should have satisfied the known bias presently do not, which may be due to a data error or due to changes in the voltage level stored in the storage cells after they were written. In addition, determining that the difference is positive or negative indicates whether the read voltage should be increased or decreased such that a re-read of the data set will result in a read bias that is the same as, or comes closer to the known bias. In one embodiment, the configuration module 352 adjusts the read voltage level in the same direction as the direction indicated by the direction module 406.	209	Added by DJM 3 2021	3/12/21, 12:00 AM
View Edit Delete	US-8380915-A1	In another example, if the read bias of the data set is 0.3, meaning that thirty percent of the data bits are binary ones, the direction module 406, in one embodiment, would subtract the expected bias, 0.5, from the read bias of the data set, 0.3, for a difference of −0.2. In this example, the direction would be the opposite of the first example, i.e. “−0.2,” “negative,” “less then,” “down,” or the like.	208	Added by DJM 3 2021	3/12/21, 12:00 AM

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