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In a further embodiment, the adjustment module 408 determines an amount to adjust the read voltage threshold based on an amplitude of the direction or amplitude of the difference determined by the direction module 406. In another embodiment, the adjustment module 408 may scale or otherwise adjust the amplitude from the direction module 406 and adjust the read voltage threshold the adjusted amount. For example, the adjustment module 408, in one embodiment, may adjust the read voltage threshold by several adjustment levels in a single adjustment, based on the amplitude of the direction. In a further embodiment, the adjustment module 408 may select an amount to adjust the read voltage threshold based on additional factors such as age, amount of wear, usage history, error history, or other aspects of the solid-state storage media 110. As described above with regard to FIG. 3B, in certain embodiments, the adjustment module 408 may make a read voltage threshold adjustment based on one or more statistics for the solid-state storage device 102 that the configuration module 352 receives from the device factor module 354.

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<w:p><w:pPr><w:pStyle w:val="TPSBody100"/></w:pPr><w:r><w:t xml:space="preserve">In a further embodiment, the adjustment module </w:t></w:r><w:r><w:t>408</w:t></w:r><w:r><w:t xml:space="preserve"> determines an amount to adjust the read voltage threshold based on an amplitude of the direction or amplitude of the difference determined by the direction module </w:t></w:r><w:r><w:t>406</w:t></w:r><w:r><w:t xml:space="preserve">. In another embodiment, the adjustment module </w:t></w:r><w:r><w:t>408</w:t></w:r><w:r><w:t xml:space="preserve"> may scale or otherwise adjust the amplitude from the direction module </w:t></w:r><w:r><w:t>406</w:t></w:r><w:r><w:t xml:space="preserve"> and adjust the read voltage threshold the adjusted amount. For example, the adjustment module </w:t></w:r><w:r><w:t>408</w:t></w:r><w:r><w:t xml:space="preserve">, in one embodiment, may adjust the read voltage threshold by several adjustment levels in a single adjustment, based on the amplitude of the direction. In a further embodiment, the adjustment module </w:t></w:r><w:r><w:t>408</w:t></w:r><w:r><w:t xml:space="preserve"> may select an amount to adjust the read voltage threshold based on additional factors such as age, amount of wear, usage history, error history, or other aspects of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve">. As described above with regard to </w:t></w:r><w:r><w:t>FIG. 3B</w:t></w:r><w:r><w:t xml:space="preserve">, in certain embodiments, the adjustment module </w:t></w:r><w:r><w:t>408</w:t></w:r><w:r><w:t xml:space="preserve"> may make a read voltage threshold adjustment based on one or more statistics for the solid-state storage device </w:t></w:r><w:r><w:t>102</w:t></w:r><w:r><w:t xml:space="preserve"> that the configuration module </w:t></w:r><w:r><w:t>352</w:t></w:r><w:r><w:t xml:space="preserve"> receives from the device factor module </w:t></w:r><w:r><w:t>354</w:t></w:r><w:r><w:t>.</w:t></w:r></w:p>