16/146,238
Paragraph Number105
6618
| Application | Dedicated termination dies for memory systems | ||
|---|---|---|---|
| Matter Number | FSP1845 | Reference Case 1 | FSP1845 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
Additionally, die group configurations where none of the dies include an ODT resistance circuit may be less than optimal since none of the dies of the die group can terminate the transmission line with a termination resistance at a low level. In turn, the transmission line 308 is limited in terms of the frequency, bandwidth, and/or data rate of the signals that it can transmit with sufficient quality. Accordingly, configuring at least one of the dies of the die group 306, such as the end die 310, with an ODT resistance circuit, while configuring at least one of the other dies without an ODT resistance circuit, may provide an optimal combination of dies with and without ODT resistance circuits that desirably terminates the transmission line 308 with a low resistance level at the memory side while reducing the effective die capacitance, which in turn allows for signals to be communicated over the transmission line 308 between the controller die 102 and the die group 306 at higher frequencies, bandwidth, and/or data rates.
Notes
Added by DJM 12 2021