6618

Application Dedicated termination dies for memory systems
Matter Number FSP1845 Reference Case 1 FSP1845
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16/146,238

Paragraph Number

105

Content

Additionally, die group configurations where none of the dies include an ODT resistance circuit may be less than optimal since none of the dies of the die group can terminate the transmission line with a termination resistance at a low level. In turn, the transmission line 308 is limited in terms of the frequency, bandwidth, and/or data rate of the signals that it can transmit with sufficient quality. Accordingly, configuring at least one of the dies of the die group 306, such as the end die 310, with an ODT resistance circuit, while configuring at least one of the other dies without an ODT resistance circuit, may provide an optimal combination of dies with and without ODT resistance circuits that desirably terminates the transmission line 308 with a low resistance level at the memory side while reducing the effective die capacitance, which in turn allows for signals to be communicated over the transmission line 308 between the controller die 102 and the die group 306 at higher frequencies, bandwidth, and/or data rates.

Notes

Added by DJM 12 2021