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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
TMC-PAT-7-PROV
FPR-PAT-1-PROV
TMC-PAT-8-PROV
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
Application Number
16/146,238
Matter Number
Paragraph Number
105
Content
Additionally, die group configurations where none of the dies include an ODT resistance circuit may be less than optimal since none of the dies of the die group can terminate the transmission line with a termination resistance at a low level. In turn, the transmission line 308 is limited in terms of the frequency, bandwidth, and/or data rate of the signals that it can transmit with sufficient quality. Accordingly, configuring at least one of the dies of the die group 306, such as the end die 310, with an ODT resistance circuit, while configuring at least one of the other dies without an ODT resistance circuit, may provide an optimal combination of dies with and without ODT resistance circuits that desirably terminates the transmission line 308 with a low resistance level at the memory side while reducing the effective die capacitance, which in turn allows for signals to be communicated over the transmission line 308 between the controller die 102 and the die group 306 at higher frequencies, bandwidth, and/or data rates.
Reference Case 1
Reference Case 2
Notes
Added by DJM 12 2021
Raw Data
<w:p w14:paraId="31199CA0" w14:textId="77777777" w:rsidR="00EE2B08" w:rsidRDefault="00EE2B08"><w:r><w:t xml:space="preserve">Additionally, die group configurations where none of the dies include an ODT resistance circuit may be less than optimal since none of the dies of the die group can terminate the transmission line with a termination resistance at a low level. In turn, the transmission line 308 is limited in terms of the frequency, bandwidth, and/or data rate of the signals that it can transmit with sufficient quality. Accordingly, configuring at least one of the dies of the die group 306, such as the end die 310, with an ODT resistance circuit, while configuring at least one of the other dies without an ODT resistance circuit, may provide an optimal combination of dies with and without ODT resistance circuits that desirably terminates the transmission line 308 with a low resistance level at the memory side while reducing the effective die capacitance, which in turn allows for signals to be communicated over the transmission line 308 between the controller die 102 and the die group 306 at higher frequencies, bandwidth, and/or data rates. </w:t></w:r></w:p>
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