Paragraph 130
Paragraph 130
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
130
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
—
Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,370
Content
Read level A 406, read level B 408, read level C 410, read level D 412, read level E 414, read level F 416, read level G 418, read level H 420, read level I 422, read level J 424, read level K 426, read level L 428, read level M 430, read level N 432, and read level O 434 in the depicted embodiment, may comprise default read levels that separate memory states A from Er, B from A, C from B, etc., respectively. While default read levels may be set at the time of manufacture, they may be adjusted, as needed to ensure optimal performance of the memory cells. In certain embodiments, a default read level represents a current read level for a memory cell. "Current read level" refers to a read level that is a value that is presently being used by a die controller or storage controller for read operations on memory cells. In certain embodiments, a current read level may be a default read level that has been used for prior read operations. In another embodiment, the current read level may comprise a read level set by a prior read scan operation and which may be changed in a presently executing read scan operation.
Notes
Added by DJM 12 2021