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Read level A 406, read level B 408, read level C 410, read level D 412, read level E 414, read level F 416, read level G 418, read level H 420, read level I 422, read level J 424, read level K 426, read level L 428, read level M 430, read level N 432, and read level O 434 in the depicted embodiment, may comprise default read levels that separate memory states A from Er, B from A, C from B, etc., respectively. While default read levels may be set at the time of manufacture, they may be adjusted, as needed to ensure optimal performance of the memory cells. In certain embodiments, a default read level represents a current read level for a memory cell. "Current read level" refers to a read level that is a value that is presently being used by a die controller or storage controller for read operations on memory cells. In certain embodiments, a current read level may be a default read level that has been used for prior read operations. In another embodiment, the current read level may comprise a read level set by a prior read scan operation and which may be changed in a presently executing read scan operation.

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<w:p w14:paraId="246E680C" w14:textId="77777777" w:rsidR="00B6556D" w:rsidRDefault="00B6556D"><w:r><w:t xml:space="preserve">Read level A 406, read level B 408, read level C 410, read level D 412, read level E 414, read level F 416, read level G 418, read level H 420, read level I 422, read level J 424, read level K 426, read level L 428, read level M 430, read level </w:t></w:r><w:proofErr w:type="spellStart"/><w:r><w:t>N</w:t></w:r><w:proofErr w:type="spellEnd"/><w:r><w:t xml:space="preserve"> 432, and read level </w:t></w:r><w:proofErr w:type="spellStart"/><w:r><w:t>O</w:t></w:r><w:proofErr w:type="spellEnd"/><w:r><w:t xml:space="preserve"> 434 in the depicted embodiment, may comprise default read levels that separate memory states A from Er, B from A, C from B, etc., respectively. While default read levels may be set at the time of manufacture, they may be adjusted, as needed to ensure optimal performance of the memory cells. In certain </w:t></w:r><w:r><w:lastRenderedPageBreak/><w:t xml:space="preserve">embodiments, a default read level represents a current read level for a memory cell. "Current read level" refers to a read level that is a value that is presently being used by a die controller or storage controller for read operations on memory cells. In certain embodiments, a current read level may be a default read level that has been used for prior read operations. In another embodiment, the current read level may comprise a read level set by a prior read scan operation and which may be changed in a presently executing read scan operation. </w:t></w:r></w:p>