16455676

Paragraph Number

64

The method includes singulating through the passivation layer and the optically transmissive substrate to form a plurality of semiconductor packages. In various implementations, singulating may be performed through, by non-limiting example, sawing, laser cutting, any combination thereof, and other methods for singulating through materials such as glass, metal, plastics, and/or semiconductor materials. Referring to FIG. 18, an implementation of a semiconductor package 68 after singulation is illustrated. As previously described, the semiconductor package 68 includes a first RDL 70 and a second RDL 72 to provide electrical connectivity to the device without the use of TSVs. The first RDL 72 is coupled to the optically transmissive lid 74. In various implementations, the optically transmissive lid may include, by non-limiting example, glass, polycarbonate, acrylic, plastics, or other materials that allow some or all of a desired wavelength of light to pass through the material. The first RDL is also mechanically and electrically coupled with inner bumps 76 which are coupled to the second side of the semiconductor die 78 through die pads 80. In various implementations, two or more die pads are positioned around the active area of the die. The active area 82 of the die 78 may include a sensor area of an image sensor die. The semiconductor die is encapsulated in an isolation layer 84. The semiconductor device including the first RDL 70, second RDL 72, and the isolation layer 84 are encapsulated in a passivation layer 86. In this particular implementation, solder balls are coupled to the second RDL through openings in the passivation layer. In various implementations, other surface mount connection types (pins, studs, stud bumps, pads, etc.) may be used.

Added by DJM 3 2021