16455676

Paragraph Number

62

The method also includes forming a second redistribution layer (RDL). The second RDL extends from the inner terminals of the first RDL to the first side of each of the plurality of semiconductor die. Referring to FIG. 14, the plurality of die 52 are illustrated after formation of the second RDL 62. In various implementations, the second RDL may be formed of similar material as the first RDL and include a combination of dielectric material and electrically conductive material. By non-limiting example, the RDLs described herein may include, by non-limiting example, polyimide, titanium, copper, nickel, aluminum, alloys thereof, any combination thereof, and other suitable combinations of materials to protect/insulate the semiconductor die and provide conductivity between the die pads of the semiconductor die and the outer electrical terminals of the device. Referring to FIG. 15, an enlargement of area B in FIG. 14 is illustrated. In FIG. 15, the second RDL 62 is illustrated as a single structure (though it is a multi-layered structure) mechanically coupling with the first RDL 32. The second RDL 62 is also electrically coupled with the first RDL 32 and provides connectivity between the first side of the semiconductor die and the second side of the semiconductor die. The second RDL will also provide electrical connectivity to the surface mount interconnect elements and any electrical connection elements within the semiconductor die.

Added by DJM 3 2021