16455676

Paragraph Number

59

The method also includes etching of the semiconductor wafer to form a plurality of semiconductor die each coupled to the transmissive substrate. Each semiconductor die includes an active area on the second side of the die. The semiconductor wafer 36 is therefore etched on and around the scribe lines of the semiconductor wafer on the first side of the semiconductor wafer. In various implementations, etching may include wet etching and dry etching and may involve various patterning steps and operations including photolithography. Referring to FIG. 10, the plurality of semiconductor die 52 coupled to the optically transmissive substrate 24 following etching is illustrated. As illustrated, the sidewalls 54 of the semiconductor die 52 are angled. The sidewalls of the semiconductor die are angled during the etching process. In various implementations, the sidewalls may be angled between 85 degrees and 60 degrees from a plane formed by the first side of the semiconductor die.

Added by DJM 3 2021