Paragraph 50
Paragraph 50
Matter Number
ONSO3305US - Onsemi346
Paragraph Number
50
Application Number
16455676
Reference Case 1
ONSO3305US - Onsemi346
Reference Case 2
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Created
3/3/21, 12:00 AM
Modified
3/3/21, 12:00 AM
Id
2,514
Content
Referring to FIG. 1, an implementation of a semiconductor package 2 is illustrated. The package 2 includes a semiconductor die 4 having a first side 6 and a second side 8. The semiconductor die is an image sensor die having an active area 10 on the second side 8 of the die 4. As illustrated, the sidewalls of the semiconductor die are angled. In various implementations, the angles of the sidewalls may be between 85 degrees and 60 degrees. The angles of the sidewalls may be formed through etching. In some implementations, the etching may be dry etching or wet etching. In various implementations, the semiconductor die may be a different device than an image sensor, such as, by non-limiting example, a processor, a microcontroller, a power semiconductor device, or any other semiconductor device type. An optically transmissive lid 12 is coupled to the semiconductor die 4 through an adhesive, two interconnect bumps 14, and a first redistribution layer (RDL) 16. In various implementations, the optically transmissive lid may include, by non-limiting example, glass, polycarbonate, acrylic, plastics, or other materials that allow some or all of a desired wavelength of light to pass through the material. In various implementations, the adhesive may include, by non-limiting example, epoxy, resin, polymers, glue, and other adhesive materials used in coupling components of semiconductor devices. In other implementations, one or more dams may be coupled between the semiconductor die and the optically transmissive lid.
Notes
Added by DJM 3 2021