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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
50
Application Number
16455676
Reference Case 1
Reference Case 2
Content
Referring to FIG. 1, an implementation of a semiconductor package 2 is illustrated. The package 2 includes a semiconductor die 4 having a first side 6 and a second side 8. The semiconductor die is an image sensor die having an active area 10 on the second side 8 of the die 4. As illustrated, the sidewalls of the semiconductor die are angled. In various implementations, the angles of the sidewalls may be between 85 degrees and 60 degrees. The angles of the sidewalls may be formed through etching. In some implementations, the etching may be dry etching or wet etching. In various implementations, the semiconductor die may be a different device than an image sensor, such as, by non-limiting example, a processor, a microcontroller, a power semiconductor device, or any other semiconductor device type. An optically transmissive lid 12 is coupled to the semiconductor die 4 through an adhesive, two interconnect bumps 14, and a first redistribution layer (RDL) 16. In various implementations, the optically transmissive lid may include, by non-limiting example, glass, polycarbonate, acrylic, plastics, or other materials that allow some or all of a desired wavelength of light to pass through the material. In various implementations, the adhesive may include, by non-limiting example, epoxy, resin, polymers, glue, and other adhesive materials used in coupling components of semiconductor devices. In other implementations, one or more dams may be coupled between the semiconductor die and the optically transmissive lid.
Notes
Added by DJM 3 2021
Raw Data
<w:p w14:paraId="1F85566B" w14:textId="2E0D2D10" w:rsidR="00313975" w:rsidRDefault="00E26DB3" w:rsidP="00313975"><w:pPr><w:numPr><w:ilvl w:val="0"/><w:numId w:val="7"/></w:numPr><w:overflowPunct w:val="0"/><w:autoSpaceDE w:val="0"/><w:autoSpaceDN w:val="0"/><w:adjustRightInd w:val="0"/><w:spacing w:line="480" w:lineRule="auto"/><w:rPr><w:szCs w:val="24"/></w:rPr></w:pPr><w:r w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t>Referring to FIG. 1, an implementation of a semiconductor package</w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> 2</w:t></w:r><w:r w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> is illustrated. </w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> The package 2 includes a semiconductor die 4 having a first side 6 and a second side 8. The semiconductor die is an image sensor die having an active area 10 on the second side </w:t></w:r><w:r w:rsidR="009B2C8E"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve">8 </w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t>of the die</w:t></w:r><w:r w:rsidR="009B2C8E"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> 4</w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve">. </w:t></w:r><w:r w:rsidR="00FF7013"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve">As illustrated, the sidewalls of the semiconductor die are angled. In various implementations, the angles of the sidewalls may be between 85 degrees and 60 degrees. The angles of the sidewalls may be formed through etching. In some implementations, the etching may be dry etching or wet etching. </w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t>In various implementations, the semiconductor die may be a different device</w:t></w:r><w:r w:rsidR="00E42EEC"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> than an image sensor, such as, by non-limiting example, a processor, a microcontroller, a power semiconductor device, or any other semiconductor device type</w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve">. An optically </w:t></w:r><w:proofErr w:type="spellStart"/><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t>transmissive</w:t></w:r><w:proofErr w:type="spellEnd"/><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> lid </w:t></w:r><w:r w:rsidR="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve">12 </w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve">is coupled to the semiconductor die </w:t></w:r><w:r w:rsidR="009B2C8E"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve">4 </w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t>through an adhesive, two interconnect bumps</w:t></w:r><w:r w:rsidR="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> 14</w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t>, and a first redistribution layer (RDL)</w:t></w:r><w:r w:rsidR="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> 16</w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve">. In various implementations, the optically </w:t></w:r><w:proofErr w:type="spellStart"/><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t>transmissive</w:t></w:r><w:proofErr w:type="spellEnd"/><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> lid may include</w:t></w:r><w:r w:rsidR="00E42EEC"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve">, by non-limiting </w:t></w:r><w:r w:rsidR="00E42EEC"><w:rPr><w:szCs w:val="24"/></w:rPr><w:lastRenderedPageBreak/><w:t>example,</w:t></w:r><w:r w:rsidR="00313975" w:rsidRPr="00313975"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> glass, polycarbonate, acrylic, plastics, or other materials that allow some or all of a desired wavelength of light to pass through the material. In various implementations, the adhesive may include, by non-limiting example, epoxy, resin, polymers, glue, and other adhesive materials used in coupling components of semiconductor devices. </w:t></w:r><w:r w:rsidR="00FF7013"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> In other implementations, one or more dams may be coupled between the semiconductor die and the optically </w:t></w:r><w:proofErr w:type="spellStart"/><w:r w:rsidR="00FF7013"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t>transmissive</w:t></w:r><w:proofErr w:type="spellEnd"/><w:r w:rsidR="00FF7013"><w:rPr><w:szCs w:val="24"/></w:rPr><w:t xml:space="preserve"> lid. </w:t></w:r></w:p>
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