16455676

Paragraph Number

21

Implementations of semiconductor packages may be formed using implementations of methods for forming semiconductor package. Various method implementations may include: providing an optically transmissive substrate having a first side and a second side and forming a first redistribution layer (RDL) on a first side of the optically transmissive substrate. The first RDL may be formed over one or more scribe lines on the first side of the optically transmissive substrate. The method may also include providing a semiconductor wafer having a first side and a second side. A plurality of active areas may be on the second side of the semiconductor wafer and two or more die pads may be around each of the plurality of active areas. The method may include forming two or more inner bumps on each of the two or more die pads and coupling the second side of the semiconductor wafer to the first side of the optically transmissive substrate. The two or more inner bumps may be coupled on either side of the one or more scribe lines. The method may include thinning the semiconductor wafer to a predetermined thickness and etching the semiconductor wafer to the one or more scribe lines to form a plurality of semiconductor die. The method of forming semiconductor packages may also include singulating through each of the semiconductor die and a metal layer to expose one or more inner terminals of first RDL on the cover glass. The method may also include forming an isolation layer around each of the plurality of semiconductor die. The method may include forming a second redistribution layer (RDL). The second RDL may extend from the inner terminals of the first RDL to the first side of each of the plurality of semiconductor die. The method may include forming a passivation layer over the first side of each of the semiconductor die and singulating through the passivation layer and the optically transmissive substrate to form a plurality of semiconductor packages.

Added by DJM 3 2021