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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
108
Application Number
16/146,238
Reference Case 1
Reference Case 2
Content
In some example embodiments, the end die 310 is a "dummy" die for the die group 306, in that it only has I/O contact pads and ODT resistance circuits coupled to the transmission lines 134, and/or its sole function is to provide memory-side termination resistances for the transmission lines 134. For other example embodiments, such as the one shown in FIG. 3, the end die 310 includes additional circuitry 330--i.e., in addition to I/O contact pads and ODT resistance circuits. The additional circuitry 330 may be configured to perform one or more functions for the memory system 100 other than provide a memory-side termination resistance for the transmission lines 134. For example, in some example embodiments, the end die 310 is another one of the memory dies 104, configured to store data, like the memory dies 304. Accordingly, the additional circuitry 330 includes at least some of the components of the memory die 104 shown in FIG. 2B. In other example embodiments, the additional circuitry 330 includes error correction circuitry that is configured to detect and/or correct for errors in signals communicated over the transmission lines 134, and/or perform diagnostics such as parity checks or bit error rate estimation. Other types of additional circuitry 330, and/or functions other than those for storing data, performing error correction or detection, or other diagnostics, may be possible.
Notes
Added by DJM 12 2021
Raw Data
<w:p w14:paraId="0161FBE3" w14:textId="77777777" w:rsidR="00EE2B08" w:rsidRDefault="00EE2B08"><w:r><w:lastRenderedPageBreak/><w:t xml:space="preserve">In some example embodiments, the end die 310 is a "dummy" die for the die group 306, in that it only has I/O contact pads and ODT resistance circuits coupled to the transmission lines 134, and/or its sole function is to provide memory-side termination resistances for the transmission lines 134. For other example embodiments, such as the one shown in FIG. 3, the end die 310 includes additional circuitry 330--i.e., in addition to I/O contact pads and ODT resistance circuits. The additional circuitry 330 may be configured to perform one or more functions for the memory system 100 other than provide a memory-side termination resistance for the transmission lines 134. For example, in some example embodiments, the end die 310 is another one of the memory dies 104, configured to store data, like the memory dies 304. Accordingly, the additional circuitry 330 includes at least some of the components of the memory die 104 shown in FIG. 2B. In other example embodiments, the additional circuitry 330 includes error correction circuitry that is configured to detect and/or correct for errors in signals communicated over the transmission lines 134, and/or perform diagnostics such as parity checks or bit error rate estimation. Other types of additional circuitry 330, and/or functions other than those for storing data, performing error correction or detection, or other diagnostics, may be possible. </w:t></w:r></w:p>
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