Term #1,134
cell threshold voltage distribution
Claim Term
cell threshold voltage distribution
Origin matter
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Reference Case 1
FSP1812
Date Added
5/21/20
Created
5/21/20, 2:03 PM
Modified
5/21/20, 2:03 PM
Full Desc
"Cell threshold voltage distribution" refers to a process or method for determining a threshold voltage for each memory cell in a set of memory cells. Cell threshold voltage distribution may be referred to as cell voltage distribution and may be referred to using the acronym “CVD.”A cell threshold voltage distribution may be determined during research and development of non-volatile memory technology to understand how memory cells behave under different conditions. In certain embodiments, a cell threshold voltage distribution may be performed during operation of non-volatile memory to determine whether the read levels being used to read a memory cell are adequate. If a bit error rate for a first set of read levels is inadequate, countermeasures may be taken to reduce the bit error rate.In certain embodiment, these countermeasures may include adjusting configuration parameters such that a bit error rate decreases. In certain embodiments, the steps of determining a cell threshold voltage distribution, checking read levels and other media characteristics with respect to bit error rate, and taking any countermeasures, may be referred to as a CVD scan, a read scan, or a read scan operation. A CVD scan may require significant time to complete due to the various steps involved and the number of memory cells being scanned. In particular, where memory cells store four or more bits per memory cell, a CVD scan may incur high latency, unless aspects of the claimed solution are used.