Paragraph 104
Paragraph 104
Application
Dedicated termination dies for memory systems
Matter Number
FSP1845
Paragraph Number
104
Application Number
16/146,238
Reference Case 1
FSP1845
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,617
Content
In other example embodiments, all of the dies of the die group 306--i.e., all of the memory dies 304 and the end die 310--are configured with an ODT resistance circuit. While these embodiments may be optimal from a manufacturing perspective since all of the dies have the same ODT configuration, such embodiments provide a less than optimal effective die capacitance for the transmission line 308. In contrast, reducing the number of dies of the die group 306 that has an ODT resistance circuit coupled to the transmission line 308 reduces the effective die capacitance. To illustrate, for a die group that includes 16 dies, configuring only the end die with a termination resistance circuit may reduce the effective die (or parasitic) capacitance by over 30% (e.g., from 2.4 picoFarads (pF) to 1.8 pF, in some embodiments). The reduction in capacitance, in turn, allows for increased frequency, bandwidth, and/or data rate at which signals can be transmitted over the transmission line 308 without degrading the quality of the transmissions below acceptable levels.
Notes
Added by DJM 12 2021