Paragraph 103
Paragraph 103
Application
Dedicated termination dies for memory systems
Matter Number
FSP1845
Paragraph Number
103
Application Number
16/146,238
Reference Case 1
FSP1845
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,616
Content
In general, an ODT resistance circuit may include one or more resistors in combination with one or more transistors (switches) to provide a variable resistance, such as at one or more high resistance levels and/or one or more low resistance levels, as previously described. Such circuit components cause the ODT resistance circuit to have an associated capacitance, which adds to the die capacitance of the die in which the ODT resistance circuit is configured, increasing an effective die (or parasitic) capacitance that contributes to the characteristic impedance of the transmission line 308 over the wire bond portion 320. The higher the effective die capacitance, the more limited the frequency, bandwidth, or data rate at which signals can be transmitted over the transmission line 308 with sufficient quality.
Notes
Added by DJM 12 2021