Paragraph 102
Paragraph 102
Application
Dedicated termination dies for memory systems
Matter Number
FSP1845
Paragraph Number
102
Application Number
16/146,238
Reference Case 1
FSP1845
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,615
Content
In various embodiments, none, or at least one, of the memory dies 304 similarly includes an ODT resistance circuit, like the ODT resistance circuit 328 of the end die 310, such that an M-number of dies of the die group 306 that includes an ODT resistance circuit coupled to the transmission line 308 is less than the total N+1 number of dies of the die group 306. Accordingly, at least one of the dies of the group 306 does not include an ODT resistance circuit connected to its I/O contact pad forming part of the transmission line 308. In particular example embodiments, such as the one shown in FIG. 3, only the end die 310 has its ODT resistance circuit 328, and the other dies of the die group--i.e., all of the N-number of memory dies 304(1) to 304(N)--are configured without ODT resistance circuits coupled to the transmission line 308. In other example embodiments, in addition to the end die 310, at least one but less than all of the memory dies 304 includes an ODT resistance circuit coupled to the transmission line 308. For example, FIG. 6 shows an alternative die group 602, where the Nth memory die 304(N) includes an ODT resistance circuit 604 coupled to its I/O contact pad 322(N), like the end die 310.
Notes
Added by DJM 12 2021