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Paragraph Number95
6608
| Application | Dedicated termination dies for memory systems | ||
|---|---|---|---|
| Matter Number | FSP1845 | Reference Case 1 | FSP1845 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
Additionally, the ODT resistance circuit 328 may be configured to change or adjust its resistance from a first resistance level to a second resistance level. The first and second resistance levels may be any of various combinations of high and low resistance levels. That is, depending on the configuration, the ODT resistance circuit 328 may be configured to change its resistance from a high resistance level to a low resistance level, from a low resistance level to a high resistance level, from a first high resistance level of a plurality of high resistance levels to a second high resistance level of the plurality of high resistance levels (where the first high resistance level can be either higher or lower than the second high resistance level), or from a first low resistance level of a plurality of low resistance levels to a second low resistance level of the plurality of low resistance levels (where the first low resistance level can be either higher or lower than the second low resistance level).
Notes
Added by DJM 12 2021