6484

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

244

Content

In block 1406, the read scan circuit may scan the second read level window for a second candidate read level that activates the fewest number of memory cells in relation to other candidate read levels within the second read level window. Once the first candidate read level and second candidate read level are determined by the read scan circuit, in block 1408, the read scan circuit may configure a read operation to use the first candidate read level and the second candidate read level.

Notes

Added by DJM 12 2021