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Paragraph Number244
6484
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
In block 1406, the read scan circuit may scan the second read level window for a second candidate read level that activates the fewest number of memory cells in relation to other candidate read levels within the second read level window. Once the first candidate read level and second candidate read level are determined by the read scan circuit, in block 1408, the read scan circuit may configure a read operation to use the first candidate read level and the second candidate read level.
Notes
Added by DJM 12 2021