Paragraph 244
Paragraph 244
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
244
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,484
Content
In block 1406, the read scan circuit may scan the second read level window for a second candidate read level that activates the fewest number of memory cells in relation to other candidate read levels within the second read level window. Once the first candidate read level and second candidate read level are determined by the read scan circuit, in block 1408, the read scan circuit may configure a read operation to use the first candidate read level and the second candidate read level.
Notes
Added by DJM 12 2021