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Paragraph Number243
6483
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
In block 1404, the read scan circuit may configure a second read level window for a second candidate read level based on a correlation. The correlation is between at least one of the two adjacent memory states and one or more other adjacent memory states associated with the second read level window.
Notes
Added by DJM 12 2021