Paragraph 243
Paragraph 243
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
243
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,483
Content
In block 1404, the read scan circuit may configure a second read level window for a second candidate read level based on a correlation. The correlation is between at least one of the two adjacent memory states and one or more other adjacent memory states associated with the second read level window.
Notes
Added by DJM 12 2021