16869424
Paragraph Number242
6482
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
FIG. 14 illustrates a method for conducting a read scan operation 1400 in accordance with one embodiment. At block 1402, a read scan circuit may scan a first read level window for a first candidate read level that activates the fewest number of memory cells in relation to other candidate read levels within the first read level window. The first read level window may test read levels between two adjacent memory states.
Notes
Added by DJM 12 2021