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Dave's PCF WIP: Paragraphs

6482

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

242

Content

FIG. 14 illustrates a method for conducting a read scan operation 1400 in accordance with one embodiment. At block 1402, a read scan circuit may scan a first read level window for a first candidate read level that activates the fewest number of memory cells in relation to other candidate read levels within the first read level window. The first read level window may test read levels between two adjacent memory states.

Notes

Added by DJM 12 2021