Paragraph 242
Paragraph 242
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
242
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,482
Content
FIG. 14 illustrates a method for conducting a read scan operation 1400 in accordance with one embodiment. At block 1402, a read scan circuit may scan a first read level window for a first candidate read level that activates the fewest number of memory cells in relation to other candidate read levels within the first read level window. The first read level window may test read levels between two adjacent memory states.
Notes
Added by DJM 12 2021