Paragraph 241
Paragraph 241
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
241
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,481
Content
The read scan circuit 1312 may then set the first read level as a current read level for reading data from the first set of memory cells and may set the second read level as a current read level for reading data from the second set of memory cells. One skilled in the art will recognize that the read scan circuit 1312 and calibration circuit 1314 may reside in logic modules other than a health manager 1310. This illustration is not intended to limit this aspect of the disclosed system.
Notes
Added by DJM 12 2021