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Dave's PCF WIP: Paragraphs

6480

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

240

Content

The read scan circuit 1312 may determine a correlation between a memory state for the first set of memory cells and a memory state for a second set of memory cells. Next, the read scan circuit 1312 may determine a second read level for reading data programmed to the second set of memory cells. The second read level may be determined based on the correlation between the memory state for the first set of memory cells and the memory state for the second set of memory cells.

Notes

Added by DJM 12 2021