Paragraph 240
Paragraph 240
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
240
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,480
Content
The read scan circuit 1312 may determine a correlation between a memory state for the first set of memory cells and a memory state for a second set of memory cells. Next, the read scan circuit 1312 may determine a second read level for reading data programmed to the second set of memory cells. The second read level may be determined based on the correlation between the memory state for the first set of memory cells and the memory state for the second set of memory cells.
Notes
Added by DJM 12 2021