Paragraph 239
Paragraph 239
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
239
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,479
Content
In one embodiment, the read scan circuit 1312 may determine a first read level for reading data programmed to a first set of memory cells of the storage block 1316. The first set of memory cells may be associated with a first memory state.
Notes
Added by DJM 12 2021