6479

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

239

Content

In one embodiment, the read scan circuit 1312 may determine a first read level for reading data programmed to a first set of memory cells of the storage block 1316. The first set of memory cells may be associated with a first memory state.

Notes

Added by DJM 12 2021