Paragraph 238
Paragraph 238
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
238
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,478
Content
In one embodiment, the health manager 1310 may implement a BES read scan operation that uses the read scan circuit 1312. The read scan circuit 1312 may iteratively read data of a storage block using a predetermined number of candidate read levels. The read scan circuit 1312 may test candidate read levels of a set of candidate read levels based on a correlation between two memory states for memory cells of the storage block. The error correction code decoder 1308 may determine an estimated bit error rate for the data read during the read scan operation (e.g., as part of a BES read scan operation), and the calibration circuit 1314 may calibrate memory cells based on the read levels determined by the read scan circuit 1312.
Notes
Added by DJM 12 2021