6478

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

238

Content

In one embodiment, the health manager 1310 may implement a BES read scan operation that uses the read scan circuit 1312. The read scan circuit 1312 may iteratively read data of a storage block using a predetermined number of candidate read levels. The read scan circuit 1312 may test candidate read levels of a set of candidate read levels based on a correlation between two memory states for memory cells of the storage block. The error correction code decoder 1308 may determine an estimated bit error rate for the data read during the read scan operation (e.g., as part of a BES read scan operation), and the calibration circuit 1314 may calibrate memory cells based on the read levels determined by the read scan circuit 1312.

Notes

Added by DJM 12 2021