Paragraph 237
Paragraph 237
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
237
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,477
Content
The read scan circuit 1312 references one or more media characteristics for a set of storage cells to determine a configuration parameter for the set of storage cells. The read scan circuit 1312, in response to determining a configuration parameter for a set of storage cells, may configure the set of storage cells to use the determined configuration parameter. The read scan circuit 1312 may periodically update media characteristics for a set of storage cells, update a configuration parameter for the set of storage cells, and reconfigure the set of storage cells to use the updated configuration parameter. The read scan circuit 1312 may configure storage cells with configuration parameters during execution of input/output operations, during a startup operation, in response to a background scan of a set of storage cells indicating a changed media characteristic, or the like.
Notes
Added by DJM 12 2021