16869424

Paragraph Number

236

In one embodiment, the read scan circuit 1312 manages the non-volatile memory array 206 by proactively setting and adjusting configuration parameters for storage cells of the non-volatile memory array 206. By determining configuration parameters proactively before an error occurs, the read scan circuit 1312 may prevent certain errors from occurring, without the performance penalty of retrying reads or performing other remedial measures for the prevented errors. The read scan circuit 1312, in certain embodiments, adapts configuration parameters for a use case of the storage device 1302 to configure storage cells for the use case instead of using default configuration parameters.

Added by DJM 12 2021