Paragraph 233
Paragraph 233
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
233
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,473
Content
The read scan circuit 1312 reads data from storage blocks of the non-volatile memory array 206 and coordinates with the health manager 1310 to determine a health for the storage cells of the storage block. The read scan circuit 1312 may implement a read scan operation and may check memory state read levels of each storage block.
Notes
Added by DJM 12 2021