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Paragraph Number

227

The read scan circuit 1204 may thus be used by the die controller 1202 to determine the most suitable read levels for memory states as described above for the first read level and the second read level. The die controller 1202 may then interact with the state machine 214 and read/write circuits 208 to set the first read level and the second read level, as well as other determined read levels for the memory states expressed by the memory cells of the non-volatile memory array 206. These set read levels may be used for subsequent read operations.

Added by DJM 12 2021