16869424
Paragraph Number226
6466
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
In one embodiment, the read scan circuit 1204 may determine the second read level by multiplying a current read level for the second memory state by a correlation factor representative of the correlation. In other embodiments, the read scan circuit 1204 may determine the second read level by choosing a second set of candidate read levels based on the correlation. This second set of candidate read levels may be smaller than the first set of candidate read levels (e.g., second read level window 1104 as illustrated in FIG. 11 may be smaller than read level window 608 shown in FIG. 6). The read scan circuit 1204 iteratively tests the second set of candidate read levels until the candidate read level activates a fewest number of memory cells in relation to other candidate read levels within the second set of candidate read levels to determine the second read level for the second memory state.
Notes
Added by DJM 12 2021