Paragraph 225
Paragraph 225
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
225
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,465
Content
in certain embodiments, read scan operations may be more efficient if a first read level for a first memory state may be determined through thorough scanning, checking, or testing. Next, a correlation, that is as accurate as possible, between the first memory state and second memory state may be used to determine read levels, or adjustments to read levels for the second memory state. Read levels for the second memory state may, in some embodiments, be adjusted based on the correlation, obviating the need for equally thorough (and time consuming) testing for adjustments to read levels associated with the second memory state.
Notes
Added by DJM 12 2021